Deposition of molybdenum carbonitride thin films from Mo(NBu^t)₂(NHBu^t)₂

Mo(NBu^t)₂(NHBu¹)₂ is used as a single-source precursor to deposit thin films of cubic phase molybdenum carbonitride, MoC_xN_y (x: 0.2-0.55, y: 0.1-0.47), by chemical vapor deposition on silicon substrates. In general, the C/Mo ratios increased from 0.2 to 0.55 and the N/Mo ratios decreased from 0.47 to 0.1 with increasing the temperature of deposition from 773 to 923 K. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon atoms were incorporated through β-methyl activation of the ligands.