Sequential multiplication of dislocation sources along a crack front revealed by high-voltage electron microscopy and tomography
Source abstract
Abstract
The three-dimensional structure of crack tip dislocations in single crystal silicon was observed by combining high-voltage electron microscopy and tomography. It was revealed that dislocations cross-slipped proximal to the crack tip even in the initial stages of plastic deformation. The local stress intensity factor along the crack front was calculated by taking into account the experimentally determined dislocation character. Based on these observations and calculations, a model to account for the sequential multiplication of dislocation sources along the crack front is proposed.
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Research context
OpenAlex topics: Microstructure and mechanical properties · Hydrogen embrittlement and corrosion behaviors in metals · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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