High-resolution transmission electron microscopy (HRTEM) observation of dislocation structures in AlN thin films
Source abstract
Abstract
The structure and configuration of threading dislocations (TDs) in AlN films grown on (0001) sapphire by metal–organic vapor phase epitaxy (MOVPE) were characterized by high-resolution transmission electron microscopy (HRTEM). It was found that the TDs formed in the films were mainly the perfect edge dislocations with the Burgers vector of b = ⅓〈11¯20〉. The majority of the edge TDs were not randomly formed but densely arranged in lines. The arrays of the edge TDs were mainly observed on the {11¯20} and {10¯10} planes. These two planes showed different configurations of TDs. TD arrays on both of these planes constituted low-angle boundaries. We suggest that these TDs are introduced to compensate for slight misorientations between the subgrains during the film growth.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Acoustic Wave Resonator Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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