Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al₂O₃ by using flux- and temperature-modulated techniques

Valentin N. Jmerik; Dmitrii V. Nechaev; Sergey Rouvimov; Valentin V. Ratnikov; Peter S. Kop'ev; Mikolai V. Rzheutski; Eugenii V. Lutsenko; Gennadii P. Yablonskii; Maher Aljohenii; Abdulaziz Aljerwii; Ahmed Alyamani; Sergey V. Ivanov

doi:10.1557/jmr.2015.220

journal article·2015-10-14

Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al₂O₃ by using flux- and temperature-modulated techniques

Valentin N. Jmerik, Dmitrii V. Nechaev, Sergey Rouvimov, Valentin V. Ratnikov, Peter S. Kop'ev, Mikolai V. Rzheutski, Eugenii V. Lutsenko, Gennadii P. Yablonskii, Maher Aljohenii, Abdulaziz Aljerwii, Ahmed Alyamani, Sergey V. Ivanov

Journal of Materials Research· Volume 30· Issue 19

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Source: crossref · Quality: short

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OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

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