Two critical thicknesses in the preferred orientation of TiN thin film
Source abstract
Abstract
The preferred orientation of the TiN film grown by sputter-deposition was studied by the cross-sectional TEM. The preferred orientation was changed from the (200) through the (110), and then finally to the (111) with the film thickness. The cross-sectional microstructure also shows that the film consists of three layers which are all columnar structure. The (111) preferred orientation was observed in the top layer, and the (110) in the middle layer, and finally the (200) in the bottom layer. It is very surprising that the (110) preferred orientation could be observed in a medium thickness region and there are two kinds of critical thicknesses. These results surely show the strong dependence of the change in the preferred orientation on the strain energy in TiN thin films.
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Research context
OpenAlex topics: Metal and Thin Film Mechanics · GaN-based semiconductor devices and materials · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (10)
Show source-provided references
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