Growth and characterization of c-axis oriented LiNbO₃ film on a transparent conducting Al:ZnO inter-layer on Si

C-axis oriented lithium niobate (LiNbO₃) films were deposited by pulsed-laser deposition on silicon using a transparent conducting interlayer of aluminum (Al)-doped zinc oxide (ZnO). Only two x-ray diffraction reflections corresponding to (006) and (0012) planes of LiNbO₃ were observed in the films deposited at a 100-mTorr oxygen pressure and a 450–500 °C substrate temperature. Presence of sharp modes corresponding to E(TO) and A(LO), and absence of any superfluous peaks mainly around 900–905 cm⁻¹ in the Raman spectra confirmed the formation of textured LiNbO₃ film. Measured value of direct current and alternate current (AC) conductivities and dielectric constant are 8.6 × 10^-12 Ω⁻¹cm^-1, 1.16 × 10^-6 Ω⁻¹cm^-1, and 29.3, respectively, at room temperature. Behavior of dielectric constant and AC conductivity with frequency and temperature are close to the reported single-crystal data.