DataVXJournal of Materials ResearchPaper
journal article·1994-09

Epitaxial LiNbO3 thin films on sapphire substrates grown by solid source MOCVD

Z. Lu, R. Hiskes, S.A. DiCarolis, R.K. Route, R.S. Feigelson, F. Leplingard, J.E. Fouquet

Journal of Materials Research· Volume 9· Issue 9
Publisher page
Source abstract

Abstract

C-axis LiNbO3 epitaxial films have been grown on c-plane sapphire substrates by solid source metal-organic chemical vapor deposition (MOCVD) using the tetramethylheptanedionate sources, Li(thd) and Nb(thd)4. Stoichiometric LiNbO3 films were deposited from Li(thd)-rich source compositions. Rocking curve FWHM values as low as 0.044°were measured on films grown at 710 °C. Rocking curve peak widths became broader as films were grown at progressively lower substrate temperatures. Single prism coupling experiments revealed clearly visible optical waveguiding, with optical attenuation values as low as 2 dB/cm in the best films.
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Research context

Materials processing

OpenAlex topics: Photonic and Optical Devices · Photorefractive and Nonlinear Optics · Semiconductor Lasers and Optical Devices

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