The reaction between a TiNi shape memory thin film and silicon
Source abstract
Abstract
The reaction between shape-memory TiNi thin films and silicon has been characterized by conventional, analytical, and high-resolution transmission electron microscopy. A reaction layer is formed during the 525 °C post-deposition crystallization anneal of the sputter-deposited TiNi, and consists of several phases: Ti2Ni, a nickel silicide, and a ternary titanium nickel silicide. The mechanism for the interlayer formation is discussed.
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Research context
OpenAlex topics: Shape Memory Alloy Transformations · Metal and Thin Film Mechanics · Acoustic Wave Resonator Technologies
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References (18)
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