Thermodynamics and phase stability in the In–N system
Source abstract
Abstract
Results of a chemical vapor deposition crystal growth method intended to produce large amounts of InN needed for thermodynamic experiments are reported. Polycrystalline films of InN were grown by reaction of InCl3 and NH3 in a hot-wall silica reactor under nearly atmospheric pressure. Samples were analyzed using x-ray diffraction and chemical analysis. The decomposition of InN was studied in both thin film and powder form. InN films were investigated by isothermal heating under nitrogen and subsequent microscopic inspection. The removal of the nucleation barrier of forming the first liquid phase was emphasized. InN powder decomposition experiments involved two different customized thermogravimetric methods: (i) dynamic oscillation thermogravimetric analysis (TGA), and (ii) isothermal stepping TGA for a higher resolution of the decomposition start. The decomposition start was found consistently at (773 ±5) K under 1 bar of nitrogen. Nevertheless, it is suggested that InN may be metastable even below room temperature based on Computer Coupling of Phase Diagrams and Thermo chemistry-type thermodynamic analysis of all available phase equilibrium and thermodynamic data. This included the determination of the absolute entropy of InN, 31.6 ±3 J/mol-formula K, based on a Debye and Einstein analysis of the experimental data on the heat capacity. All calculations of pressure are corrected for the fugacity of nitrogen, which becomes crucial above 1000 bar. The contradictory literature data in the In–N system are discussed based on three different internally consistent thermodynamic analyses of the system that highlight the consequences of different choices made on the decomposition temperature of InN. Widely reproduced data in the literature are shown to produce thermodynamically impossible negative absolute entropy of InN. Complete P-T-x phase diagrams are given, which strongly suggest that solid InN is metastable under ambient conditions. To find out that InN crystals could be reproducibly superheated more than 500 K before they actually decompose comes as a surprise compared to other III-V systems, especially Ga–N.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · nanoparticles nucleation surface interactions
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (73)
Show source-provided references
1. Marina · Russ. J. Phys. Chem. · 1969 · 43 · 963
2. 10.1070/RC1971v040n07ABEH00194410.1070/RC1971v040n07ABEH001944 ↗
3. Wagman · 1968
4. 10.1016/0364-5916(94)90027-210.1016/0364-5916(94)90027-2 ↗
5. Davydov · 1999 · 98–18 · 38
6. 10.1021/jp993752s10.1021/jp993752s ↗
7. 10.1016/0022-0248(84)90071-X10.1016/0022-0248(84)90071-X ↗
8. Sato · 1932 · 29 · 19
9. Mah · 1961
10. 10.1016/0364-5916(81)90020-110.1016/0364-5916(81)90020-1 ↗
11. 10.1007/BF0144340710.1007/BF01443407 ↗
12. 10.1016/S0038-1101(96)00219-510.1016/S0038-1101(96)00219-5 ↗
13. Vorob'ev · Russ. J. Phys. Chem. · 1971 · 45 · 1501
14. 10.1361/10549710177033291010.1361/105497101770332910 ↗
15. 10.1016/0364-5916(91)90028-I10.1016/0364-5916(91)90028-I ↗
16. Marmaluk · High Temperature · 1998 · 36 · 817
17. Demidenko · Russ. J. Phys. Chem. · 1975 · 49 · 940
18. 10.1063/1.55575410.1063/1.555754 ↗
19. 10.1143/JJAP.36.L74310.1143/JJAP.36.L743 ↗
20. 10.1063/1.4609810.1063/1.46098 ↗
21. 10.1063/1.4609910.1063/1.46099 ↗
22. 10.1063/1.37197110.1063/1.371971 ↗
23. Edgar · 1994
24. 10.1016/0364-5916(84)90036-110.1016/0364-5916(84)90036-1 ↗
25. Xia · 1994 · 309 · 30710.1063/1.46334 ↗
26. Antonovich · Zh. Prikl. Mekh. Tekh. Fiz. · 1969 · 10 · 99
27. 10. Grzegory I. , Ph.D. Thesis, High-Pres. Res. Cent., Polish Academy of Sciences, Warszawa, Poland (1995; in Polish).
28. Vorob'ev · Russ. J. Phys. Chem. · 1973 · 47 · 1616
29. Krukowski · 1999 · 21
30. 10.1557/JMR.2001.038910.1557/JMR.2001.0389 ↗
31. Chase · CALPHAD · 1995 · 19 · 43710.1016/0364-5916(96)00002-8 ↗
32. Gordienko · Russ. J. Phys. Chem. · 1977 · 51 · 315
33. 10.1103/PhysRevB.7.147910.1103/PhysRevB.7.1479 ↗
34. 10.1016/0364-5916(91)90030-N10.1016/0364-5916(91)90030-N ↗
35. 10.1016/0022-3697(87)90057-610.1016/0022-3697(87)90057-6 ↗
36. 10.1007/BF0265140010.1007/BF02651400 ↗
37. 10.1016/S0022-3697(97)00222-910.1016/S0022-3697(97)00222-9 ↗
38. 10.1088/0022-3727/31/20/00110.1088/0022-3727/31/20/001 ↗
39. 10.1116/1.58879310.1116/1.588793 ↗
40. 10.1016/S0022-0248(96)00751-810.1016/S0022-0248(96)00751-8 ↗
41. Tansley · 1994 · 35
42. 10.1016/0022-0248(75)90131-110.1016/0022-0248(75)90131-1 ↗
43. 35.PANDAT, Software for Multicomponent Phase Diagram Calculation, Computherm LLC, Madison, WI (2001).
44. Landolt-Boernstein · 1982 · 17a
45. 10.1016/S0364-5916(97)00006-010.1016/S0364-5916(97)00006-0 ↗
46. 10.1002/zaac.1938239030710.1002/zaac.19382390307 ↗
47. Park · J. Kor. Phys. Soc. · 1999 · 34 · S199
48. 20. Unland J. , Onderka B. , Davydov A. , and Schmid-Fetzer R. (submitted).
49. 10.1063/1.33690610.1063/1.336906 ↗
50. Lemmon · 1996
51. Kubaschewski · 1979
52. 10.1016/0025-5408(70)90028-010.1016/0025-5408(70)90028-0 ↗
53. 10.1016/0022-0248(84)90070-810.1016/0022-0248(84)90070-8 ↗
54. 10.1063/1.35390610.1063/1.353906 ↗
55. 10.1021/j100798a04110.1021/j100798a041 ↗
56. Era · Muki Zaishitsu Kenky-usho kenky-u h-okokusho · 1973 · 4 · 59
57. Edgar · 1999
58. 10.1002/zaac.1957290010910.1002/zaac.19572900109 ↗
59. 47. Class W. , Contract Rep. 1968, NASA CR-1171 (1968).
60. Hultgren · 1973
61. Porowski · 1994 · 82
62. 10.1016/0021-9614(74)90259-610.1016/0021-9614(74)90259-6 ↗
63. 10.1116/1.58589710.1116/1.585897 ↗
64. Koshenko · Inorg. Mater. · 1979 · 15 · 1329
65. Koshchenko · Neorg. Mater. · 1984 · 20 · 1787
66. 10.1016/S0022-0248(98)00006-210.1016/S0022-0248(98)00006-2 ↗
67. 10.1002/zaac.1940244020310.1002/zaac.19402440203 ↗
68. Strel'chenko · 1984
69. Kubaschewski · 1993
70. 10.1021/cm981096n10.1021/cm981096n ↗
71. 31.SGTE Substance Database, Royal Institute of Technology, Stockholm, Sweden (1994).
72. 10.1016/0022-0248(93)90605-V10.1016/0022-0248(93)90605-V ↗
73. Przhevalskii · MRS Internet J. Nitride Semicond. Res. · 1998 · 30 · 1