journal article·1995-07

Microstructures and interdiffusions of Pt/Ti electrodes with respect to annealing in the oxygen ambient

Kyu Ho Park, Cha Yeon Kim, Young Woo Jeong, Hyun Ja Kwon, Kwang Young Kim, Jeong Soo Lee, Sung Tae Kim

Journal of Materials Research· Volume 10· Issue 7
Publisher page

Abstract

The microstructural variation and the interdiffusion of Pt (80 nm)/Ti (70 nm)/SiO2/Si during annealing in O2 were investigated using Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, and scanning electron microscopy. While the as-deposited and 400 °C annealed samples showed well-defined layer structures without any significant interfacial reaction, the degree of oxidation remarkably increased with increasing temperature above 500 °C. The PtTi alloy phase with Pmma structure (AuCd type) was observed from the 500 °C annealed sample. Drastic interdiffusion occurring above 600 °C changed the Pt/Ti bilayer into a very entangled structure. Some TiO2 phases were exposed to the ambient between Pt hillocks. In addition, a small amount of Pt-silicide was found near the TiOx/SiO2 interface.
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Research context

OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Electrochemical Analysis and Applications

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