Interface modifications for improving the adhesion of a-C:H films to metals
Source abstract
Abstract
The adhesion of diamondlike hard carbon films to silicide forming metals was improved by using an interfacial silicon film several atomic layers thick. The use of thicker (> 10nm) silicon layers results in a decrease in the adhesion, probably due to a degradation of the structural integrity by excessive silicide formation.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Metal and Thin Film Mechanics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (13)
Show source-provided references
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