journal article·2015-10-28

Electrophysical and structural properties of the composite quantum wells In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As with ultrathin InAs inserts

Galib Barievich Galiev, Ivan Sergeevich Vasil'evskii, Evgeniy Aleksandrovich Klimov, Sergey Sergeevich Pushkarev, Aleksey Nikolaevich Klochkov, Petr Pavlovich Maltsev, Mihail Yuryevich Presniakov, Igor Nikolaevich Trunkin, Aleksandr Leonidovich Vasiliev

Journal of Materials Research· Volume 30· Issue 20
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Abstract

Abstract
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Source: crossref · Quality: short

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OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Advanced Semiconductor Detectors and Materials

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References (17)

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