journal article·2022-10-28

Exploring the photoelectric properties of 2D MoS2 thin films grown by CVD

Chaoguo Wu, Sicheng Luo, Xiaogang Luo, Jun Weng, Chunyan Shang, Zhitian Liu, Hongyang Zhao, David Sawtell, Liwei Xiong

Journal of Materials Research· Volume 37· Issue 20
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Abstract

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OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Perovskite Materials and Applications

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References (47)

Show source-provided references
1. O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, A. Kis, Ultrasensitive photodetectors based on monolayer MoS2. Nat. Nanotechnol. 8(7), 497 (2013)10.1038/nnano.2013.100 ↗
2. K. Roy, M. Padmanabhan, S. Goswami, T.P. Sai, G. Ramalingam, S. Raghavan, A. Ghosh, Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices. Nat. Nanotechnol. 8(11), 826 (2013)10.1038/nnano.2013.206 ↗
3. J. Pu, Y. Yomogida, K.K. Liu, L.-J. Li, Y. Iwasa, T. Takenobu, Highly flexible MoS2 thin-film transistors with ion gel dielectrics. Nano Lett. 12(8), 4013 (2012)10.1021/nl301335q ↗
4. J.-H. Chen, Z.-H. Liang, L.-R. Yuan, C. Li, M.-R. Chen, Y.-D. Xia, X.-J. Zhang, F. Xu, Y.-Q. Lu, Towards an all-in fiber photodetector by directly bonding few-layer molybdenum disulfide to a fiber facet. Nanoscale 9(10), 3424 (2017)10.1039/C6NR08436B ↗
5. F.H.L. Koppens, T. Mueller, P. Avouris, A.C. Ferrari, M.S. Vitiello, M. Polini, Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat. Nanotechnol. 9(10), 780 (2014)10.1038/nnano.2014.215 ↗
6. T. Le Quang, V. Cherkez, K. Nogajewski, M. Potemski, M.T. Dau, M. Jamet, P. Mallet, J.Y. Veuillen, Scanning tunneling spectroscopy of van der Waals graphene/semiconductor interfaces: absence of Fermi level pinning. 2d Mater. 4(3), 035019 (2017)10.1088/2053-1583/aa7b03 ↗
7. J.-D. Lu, Y.-B. Li, H.-Y. Liu, S.-J. Peng, F.-X. Zhao, Transport properties in a monolayer graphene modulated by the realistic magnetic field and the Schottky metal stripe. Physica E 83, 345 (2016)10.1016/j.physe.2016.04.006 ↗
8. M. Huang, M. Wang, C. Chen, Z. Ma, X. Li, J. Han, Y. Wu, Broadband black-phosphorus photodetectors with high responsivity. Adv. Mater. 28(18), 3481 (2016)10.1002/adma.201506352 ↗
9. M. Buscema, J.O. Island, D.J. Groenendijk, S.I. Blanter, G.A. Steele, H.S.J. van der Zant, A. Castellanos-Gomez, Photocurrent generation with two-dimensional van der Waals semiconductors. Chem. Soc. Rev. 44(11), 3691 (2015)10.1039/C5CS00106D ↗
10. M. Xu, T. Liang, M. Shi, H. Chen, Graphene-like two-dimensional materials. Chem. Rev. 113(5), 3766 (2013)10.1021/cr300263a ↗
11. Y. Zhang, T.-T. Tang, C. Girit, Z. Hao, M.C. Martin, A. Zettl, M.F. Crommie, Y.R. Shen, F. Wang, Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459(7248), 820 (2009)10.1038/nature08105 ↗
12. L. Wang, A. Kutana, B.I. Yakobson, Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS2and WS2. Ann. Phys. 526(9–10), L7 (2014)10.1002/andp.201400098 ↗
13. Z.Y. Zhang, M.S. Si, Y.H. Wang, X.P. Gao, D. Sung, S. Hong, J. He, Indirect-direct band gap transition through electric tuning in bilayer MoS2. J. Chem. Phys. 140(17), 174707 (2014)10.1063/1.4873406 ↗
14. R.F. Frindt, Single crystals of MoS2 several molecular layers thick. J. Appl. Phys. 37(4), 1928 (1966)10.1063/1.1708627 ↗
15. Y. Pang, L. Kong, D. Chen, G. Yuvaraja, Rapid Cr(VI) reduction in aqueous solution using a novel microwave-based treatment with MoS2-MnFe2O4 composite. Appl. Surf. Sci. 471, 408 (2019)10.1016/j.apsusc.2018.11.180 ↗
16. R. Kappera, D. Voiry, S.E. Yalcin, W. Jen, M. Acerce, S. Torrel, B. Branch, S. Lei, W. Chen, S. Najmaei, J. Lou, P.M. Ajayan, G. Gupta, A.D. Mohite, M. Chhowalla, Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2. APL Mater. 2(9), 092516 (2014)10.1063/1.4896077 ↗
17. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS2 transistors. Nat. Nanotechnol. 6(3), 147 (2011)10.1038/nnano.2010.279 ↗
18. C. Ataca, H. Sahin, S. Ciraci, Single-layer MX2 transition-metal oxides and dichalcogenides in a honeycomb-like structure. J. Phys. Chem. C 116(16), 8983 (2012)10.1021/jp212558p ↗
19. L.W. Xiong, K. Wang, D. Li, X.G. Luo, J. Weng, Z.T. Liu, H. Zhang, Research progress on the preparations, characterizations and applications of large scale 2D transition metal dichalcogenides films. FlatChem 21, 100161 (2020)10.1016/j.flatc.2020.100161 ↗
20. Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, M.S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7(11), 699 (2012)10.1038/nnano.2012.193 ↗
21. A. Kuc, N. Zibouche, T. Heine, Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2. Phys. Rev. B 83(24), 245213 (2011)10.1103/PhysRevB.83.245213 ↗
22. Y. Yu, Y. Yu, L.J. Huang, H.W. Peng, L.W. Xiong, L.Y. Cao, Giant gating tunability of optical refractive index in transition metal dichalcogenide monolayers. Nano Lett. 17(6), 3613 (2017)10.1021/acs.nanolett.7b00768 ↗
23. Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, H. Zhang, Single-layer MoS2 phototransistors. ACS Nano 6(1), 74 (2011)10.1021/nn2024557 ↗
24. Y. Saito, Y. Nakamura, M.S. Bahramy, Y. Kohama, J. Ye, Y. Kasahara, Y. Nakagawa, M. Onga, M. Tokunaga, T. Nojima, Y. Yanase, Y. Iwasa, Superconductivity protected by spin–valley locking in ion-gated MoS2. Nat. Phys. 12(2), 144 (2015)10.1038/nphys3580 ↗
25. M. Bernardi, M. Palummo, J.C. Grossman, Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials. Nano Lett. 13, 3664 (2013)10.1021/nl401544y ↗
26. H. Park, N. Liu, B.H. Kim, S.H. Kwon, S. Baek, S. Kim, H.K. Lee, Y.J. Yoon, S. Kim, Exceptionally uniform and scalable multilayer MoS2 phototransistor array based on large-scale MoS2 grown by RF sputtering, electron beam irradiation, and sulfurization. ACS Appl. Mater. Interfaces 12, 20645 (2020)10.1021/acsami.0c02393 ↗
27. H.S. Lee, S.-W. Min, Y.-G. Chang, M.K. Park, T. Nam, H. Kim, J.H. Kim, S. Ryu, S. Im, MoS2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett. 12(7), 3695 (2012)10.1021/nl301485q ↗
28. M.F. Khan, M.W. Iqbal, M.Z. Iqbal, M.A. Shehzad, Y. Seo, J. Eom, Photocurrent response of MoS2 field-effect transistor by deep ultraviolet light in atmospheric and N2 gas environments. ACS Appl. Mater. Interfaces 23, 21645 (2014)10.1021/am506716a ↗
29. S.-S. Chee, J.-H. Lee, K. Lee, M.-H. Ham, Defect-assisted contact property enhancement in a molybdenum disulfide monolayer. ACS Appl. Mater. Interfaces 3, 4129 (2019)
30. Y. Liu, J. Guo, E. Zhu, L. Liao, S.-J. Lee, M. Ding, I. Shakir, V. Gambin, Y. Huang, X. Duan, Approaching the Schottky-Mott limit in van der Waals metal–semiconductor junctions. Nature 557(7707), 696 (2018)10.1038/s41586-018-0129-8 ↗
31. Y. Wang, J.C. Kim, R.J. Wu, J. Martinez, X. Song, J. Yang, F. Zhao, A. Mkhoyan, H.Y. Jeong, M. Chhowalla, Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Nature 568(7750), 70 (2019)10.1038/s41586-019-1052-3 ↗
32. S. Najmaei, Z. Liu, P.M. Ajayan, J. Lou, Thermal effects on the characteristic Raman spectrum of molybdenum disulfide (MoS2) of varying thicknesses. Appl. Phys. Lett. 100(1), 013106 (2012)10.1063/1.3673907 ↗
33. Y. Wei, V.-T. Tran, C. Zhao, H. Liu, J. Kong, H. Du, Robust photodetectable paper from chemically exfoliated MoS2–MoO3 multilayers. ACS Appl. Mater. Interfaces 11(24), 21445 (2019)10.1021/acsami.9b01515 ↗
34. X. Li, J.T. Mullen, Z. Jin, K.M. Borysenko, M.B. Nardelli, K.W. Kim, Intrinsic electrical transport properties of monolayer silicene and MoS2 from first principles. Phys. Rev. B 87(11), 115418 (2013)10.1103/PhysRevB.87.115418 ↗
35. W. Zhou, X. Zou, S. Najmaei, Z. Liu, Y. Shi, J. Kong, J. Lou, P.M. Ajayan, B.I. Yakobson, J.-C. Idrobo, Intrinsic structural defects in monolayer molybdenum disulfide. Nano Lett. 13(6), 2615 (2013)10.1021/nl4007479 ↗
36. J. Hong, Z. Hu, M. Probert, K. Li, D. Lv, X. Yang, L. Gu, N. Mao, Q. Feng, L. Xie, J. Zhang, D. Wu, Z. Zhang, C. Jin, W. Ji, X. Zhang, J. Yuan, Z. Zhang, Exploring atomic defects in molybdenum disulphide monolayers. Nat. Commun. 6(1), 6293 (2015)10.1038/ncomms7293 ↗
37. Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, L. Cao, Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films. Sci. Rep. 3(1), 1866 (2013)10.1038/srep01866 ↗
38. Y. Zeng, W. Chen, B. Tang, J. Liao, J. Lou, Q. Chen, Synergetic photoluminescence enhancement of monolayer MoS2 via surface plasmon resonance and defect repair. RSC Adv. 8(42), 23591 (2018)10.1039/C8RA03779E ↗
39. S. Mouri, Y. Miyauchi, K. Matsuda, Tunable photoluminescence of monolayer MoS2 via chemical doping. Nano Lett. 13(12), 5944 (2013)10.1021/nl403036h ↗
40. K. Si, J. Ma, Y. Guo, Y. Zhou, C. Lu, X. Xu, X. Xu, Improving photoelectric performance of MoS2 photoelectrodes by annealing. Ceram. Int. 44(17), 21153 (2018)10.1016/j.ceramint.2018.08.160 ↗
41. S. Wang, Y. Xu, Y. Liu, Fluorescence enhancement of monolayer molybdenum disulfide based on sulfur vapor transfer. Acta Opt. Sin. 49(3), 0316002 (2020). (in Chinese)
42. H.M. Oh, G.H. Han, H. Kim, J.J. Bae, M.S. Jeong, Y.H. Lee, Photochemical reaction in monolayer MoS2 via correlated photoluminescence, Raman spectroscopy, and atomic force microscopy. ACS Nano 10(5), 5230 (2016)10.1021/acsnano.6b00895 ↗
43. S. Tongay, J. Zhou, C. Ataca, J. Liu, J.S. Kang, T.S. Matthews, L. You, J. Li, J.C. Grossman, J. Wu, Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating. Nano Lett. 13(6), 2831 (2013)10.1021/nl4011172 ↗
44. J. Choi, H. Zhang, J.H. Choi, Modulating optoelectronic properties of two-dimensional transition metal dichalcogenide semiconductors by photoinduced charge transfer. ACS Nano 10(1), 1671 (2016)10.1021/acsnano.5b07457 ↗
45. Y. Han, Y. Ma, Y. Liu, S. Xu, X. Chen, M. Zeng, N. Hu, Y. Su, Z. Zhou, Z. Yang, Construction of MoS2/SnO2 heterostructures for sensitive NO2 detection at room temperature. Appl. Surf. Sci. 493, 613 (2019)10.1016/j.apsusc.2019.07.052 ↗
46. S. Wang, J.K. Huang, M. Li, A. Azam, X. Zu, L. Qiao, J. Yang, S. Li, Growth of high-quality monolayer transition metal dichalcogenide nanocrystals by chemical vapor deposition and their photoluminescence and electrocatalytic properties. ACS Appl. Mater. Interfaces 13(40), 47962 (2021)10.1021/acsami.1c14136 ↗
47. S. Wang, N. Yang, M. Li, J. Zhang, A. Azam, Y. Yao, X. Zu, L. Qiao, P. Reece, J. Stride, J. Yang, S. Li, Insight into the growth behaviors of MoS2 nanograins influenced by step edges and atomic structure of the substrate. Nano Res. 15(8), 7646–7654 (2022)10.1007/s12274-022-4373-8 ↗