journal article·2009-02

Influence of oxygen deficiency on the out-of-plane tilt of epitaxial Y2O3 films on Ni–5%W tapes

C. Cantoni, E.D. Specht, A. Goyal, X. Li, M. Rupich

Journal of Materials Research· Volume 24· Issue 2
Publisher page

Abstract

We analyzed the crystallographic c-axis tilt of (001) Y2O3 films grown on biaxially textured Ni–5%W tapes under different oxygen flux conditions. Results show that different tilting mechanisms were effective in films with different oxygen stoichiometry. Moreover, the structure of the film/substrate interface investigated by transmission electron microscopy, and the residual strain of the film investigated by x-ray diffraction were also dependent on the film oxygen content. Although the oxygen stoichiometric Y2O3 sample exhibited a coherent film/substrate interface and the sharpest out-of-plane texture, the films grown under reduced oxygen pressure exhibited a smaller overall c-axis tilt due to formation of interface dislocations and regions in which the film oxygen vacancies ordered to form a lattice superstructure.
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Research context

OpenAlex topics: ZnO doping and properties · Semiconductor materials and devices · Ga2O3 and related materials

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