Evolution of the microstructure, residual stresses, and mechanical properties of W–Si–N coatings after thermal annealing
Source abstract
Abstract
W–Si–N films were deposited by reactive sputtering in a Ar + N2 atmosphere from a W target encrusted with different number of Si pieces and followed by a thermal annealing at increasing temperatures up to 900 °C. Three iron-based substrates with different thermal expansion coefficients, in the range of 1.5 × 10−6 to 18 × 10−6 K−1 were used. The chemical composition, structure, residual stress, hardness (H), and Young’s modulus (E) were evaluated after all the annealing steps. The as-deposited film with low N and Si contents was crystalline whereas the one with higher contents was amorphous. After thermal annealing at 900 °C the amorphous film crystallized as body-centered cubic α–W. The crystalline as-deposited film presented the same phase even after annealing. There were no significant changes in the properties of both films up to 800 °C annealing. However, at 900 °C, a strong decrease and increase in the hardness were observed for the crystalline and amorphous films, respectively. It was possible to find a good correlation between the residual stress and the hardness of the films. In several cases, particularly for the amorphous coating, H/E higher than 0.1 was reached, which envisages good tribological behavior. The two methods (curvature and x-ray diffraction) used for calculation of the residual stress of the coatings showed fairly good agreement in the results.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Metal and Thin Film Mechanics · Diamond and Carbon-based Materials Research · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (37)
Show source-provided references
1. Developments in vapour deposited ceramic coatings for tribological applications
2. 10.1016/S0257-8972(01)01714-510.1016/S0257-8972(01)01714-5 ↗
3. 10.1016/j.mseb.2003.09.03310.1016/j.mseb.2003.09.033 ↗
4. 10.1016/j.surfcoat.2003.10.05710.1016/j.surfcoat.2003.10.057 ↗
5. 10.1557/JMR.2000.025510.1557/JMR.2000.0255 ↗
6. 10.1016/S1359-6454(02)00365-810.1016/S1359-6454(02)00365-8 ↗
7. 10.1016/j.tsf.2004.01.04710.1016/j.tsf.2004.01.047 ↗
8. Ashby · 1992
9. 10.1016/0040-6090(94)90364-610.1016/0040-6090(94)90364-6 ↗
10. 10.1016/0040-6090(89)90030-810.1016/0040-6090(89)90030-8 ↗
11. 10.1016/0257-8972(93)90296-Z10.1016/0257-8972(93)90296-Z ↗
12. 10.1016/j.tsf.2003.11.27410.1016/j.tsf.2003.11.274 ↗
13. 10.1016/0257-8972(95)08327-810.1016/0257-8972(95)08327-8 ↗
14. 10.1007/978-1-4899-5880-810.1007/978-1-4899-5880-8 ↗
15. 10.1016/S0257-8972(02)00325-010.1016/S0257-8972(02)00325-0 ↗
16. 10.1016/S0257-8972(01)01413-X10.1016/S0257-8972(01)01413-X ↗
17. Structural and mechanical properties of amorphous W–Si–N sputtered films after thermal annealing10.1016/S0040-6090(03)00914-3 ↗
18. 10.1557/JMR.1996.009110.1557/JMR.1996.0091 ↗
19. 10.1016/S0257-8972(01)01215-410.1016/S0257-8972(01)01215-4 ↗
20. 10.1016/0040-6090(93)90689-M10.1016/0040-6090(93)90689-M ↗
21. 10.1016/S0040-6090(02)00091-310.1016/S0040-6090(02)00091-3 ↗
22. 10.1063/1.33908210.1063/1.339082 ↗
23. 10.1016/S0040-6090(97)01058-410.1016/S0040-6090(97)01058-4 ↗
24. 10.1557/JMR.2001.030410.1557/JMR.2001.0304 ↗
25. 10.1016/S0257-8972(03)00190-710.1016/S0257-8972(03)00190-7 ↗
26. 10.1016/0257-8972(90)90076-O10.1016/0257-8972(90)90076-O ↗
27. 10.1016/S0040-6090(97)01058-410.1016/S0040-6090(97)01058-4 ↗
28. Scott · 1983
29. 28. Electronic Alloys U.K., http://www.aircraftmaterialsuk.com/data/electronic/al36.html.
30. 10.1557/JMR.1996.009210.1557/JMR.1996.0092 ↗
31. 30. Powder Diffraction File, Card No. 4-0806 (2000) (International Center for Diffraction Data, Philadelphia, PA).
32. 1961
33. 10.1098/rspa.1909.002110.1098/rspa.1909.0021 ↗
34. 10.1016/0040-6090(88)90487-710.1016/0040-6090(88)90487-7 ↗
35. 10.1016/S0257-8972(99)00277-710.1016/S0257-8972(99)00277-7 ↗
36. 10.1016/S0257-8972(99)00533-210.1016/S0257-8972(99)00533-2 ↗
37. 10.1016/S0257-8972(99)00451-X10.1016/S0257-8972(99)00451-X ↗