Absorption coefficient of β–SiC grown by chemical vapor deposition
Source abstract
Abstract
The absorption coefficient of β–SiC is measured by the transmission technique. β–SiC films are grown on Si substrates by chemical vapor deposition using a buffer layer between β–SiC and the substrate. The absorption coefficient value ranges from 10 to 5.5 × 104 cm−1 in the energy range between 2.42 and 4.4 eV. The bandgap of β–SiC films investigated in this study ranges between 2.13 and 2.32 eV.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Copper Interconnects and Reliability
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References (13)
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