journal article·2008-05

Oxidation of Al–Au intermetallics and its consequences studied by x-ray photoelectron spectroscopy

T. Sritharan, Y.B. Li, C. Xu, S. Zhang

Journal of Materials Research· Volume 23· Issue 5
Publisher page

Abstract

Three common Al–Au intermetallics, Al2Au, AlAu2, and AlAu4, were oxidized in the air and characterized using x-ray photoelectron spectroscopy in terms of the elemental chemical state. It was found that there is an increasing trend of oxidation in these intermetallics as the Au content increases. AlAu4 shows the greatest tendency to oxidize with two extra peaks appearing on the Au 4f spectra after long exposure time in air. The surface of AlAu2, although fully oxidized, reveals only one Au 4f peak shift as depth increases. Al2Au was the least oxidizing compound, and the oxide is thin. The binding energies of Al 2p and Au 4f peaks were measured and reported. The Au atoms trapped in the oxide layers exhibit higher binding energy emissions compared to those of elemental Au.
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Research context

OpenAlex topics: Catalytic Processes in Materials Science · Electron and X-Ray Spectroscopy Techniques · Semiconductor materials and devices

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References (40)

Show source-provided references
1. 10.1103/PhysRevB.74.23520710.1103/PhysRevB.74.235207 ↗
2. 10.1016/0039-6028(78)90119-X10.1016/0039-6028(78)90119-X ↗
3. 10.1016/S0368-2048(02)00040-310.1016/S0368-2048(02)00040-3 ↗
4. 10.1016/S0039-6028(00)00986-910.1016/S0039-6028(00)00986-9 ↗
5. 10.1126/science.107624810.1126/science.1076248 ↗
6. 10.1016/S0360-3199(02)00138-610.1016/S0360-3199(02)00138-6 ↗
7. 10.1016/S0966-9795(00)00087-X10.1016/S0966-9795(00)00087-X ↗
8. 10.1116/1.57667510.1116/1.576675 ↗
9. 10.1007/s10853-007-1593-y10.1007/s10853-007-1593-y ↗
10. 10.1016/S0030-4018(01)01108-710.1016/S0030-4018(01)01108-7 ↗
11. 10.1016/j.solmat.2004.01.02610.1016/j.solmat.2004.01.026 ↗
12. 10.1103/PhysRevB.16.75010.1103/PhysRevB.16.750 ↗
13. Wagner · 1978 · 190
14. 10.1016/S1388-2481(00)00069-210.1016/S1388-2481(00)00069-2 ↗
15. 10.1016/S0040-6090(00)01070-110.1016/S0040-6090(00)01070-1 ↗
16. 10.1016/j.msea.2006.10.10510.1016/j.msea.2006.10.105 ↗
17. 10.1080/1478643750822964010.1080/14786437508229640 ↗
18. 10.1016/S0169-4332(01)01038-810.1016/S0169-4332(01)01038-8 ↗
19. 10.1557/JMR.2004.018410.1557/JMR.2004.0184 ↗
20. 10.1016/0039-6028(84)90207-310.1016/0039-6028(84)90207-3 ↗
21. 10.1016/j.tsf.2005.09.12110.1016/j.tsf.2005.09.121 ↗
22. 10.1063/1.32921410.1063/1.329214 ↗
23. 10.1016/j.tsf.2007.01.01710.1016/j.tsf.2007.01.017 ↗
24. 10.1109/TCAPT.2004.82575210.1109/TCAPT.2004.825752 ↗
25. Volume change due to intermetallic compound formation at the Al–Au bond in semiconductor devices.10.1143/JJAP.25.934 ↗
26. 10.1016/S0039-6028(98)00878-410.1016/S0039-6028(98)00878-4 ↗
27. 10.1016/S0039-6028(98)00309-410.1016/S0039-6028(98)00309-4 ↗
28. 10.1016/S0368-2048(01)00234-110.1016/S0368-2048(01)00234-1 ↗
29. 1958 · 68
30. 10.1116/1.57986910.1116/1.579869 ↗
31. 10.1016/0169-4332(96)00097-910.1016/0169-4332(96)00097-9 ↗
32. 10.1103/PhysRevB.29.469110.1103/PhysRevB.29.4691 ↗
33. 10.1016/0368-2048(81)80044-810.1016/0368-2048(81)80044-8 ↗
34. 10.1016/S0257-8972(01)01165-310.1016/S0257-8972(01)01165-3 ↗
35. Effects of Al2O3 films on the reliability of Au/Al joint.
36. Briggs · 1993
37. 10.1002/sia.74015010910.1002/sia.740150109 ↗
38. 10.1007/s10853-007-1592-z10.1007/s10853-007-1592-z ↗
39. 10.1016/j.scriptamat.2006.09.03810.1016/j.scriptamat.2006.09.038 ↗
40. 10.1063/1.186805610.1063/1.1868056 ↗