Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film

Electrodeposited Ag film was explored as a potential interfacial barrier to Bi segregation for suppressing the interfacial embrittlement of Cu/SnBi interconnects. The presence of Ag film introduced Ag₃Sn intermetallic layer at the interface, which effectively prevented Bi from reaching the Cu/intermetallic interface. When the persistent slip bands (PSBs) in the Cu single crystal were driven to impinge the Cu/Cu₃Sn interface, interfacial cracking was averted and instead superceded by cracking of intermetallic compounds (IMCs) at the interface.