Lattice distortion effects on electrical switching in epitaxial thin film NdNiO₃

Crystalline thin films of NdNiO₃ have been epitaxially grown on the (100) face of single-crystal LaAlO₃ substrates. These films exhibit the characteristic reversible change in electrical conductivity with temperature previously observed in bulk polycrystalline material. The temperature of the electrical transition in the epitaxial thin films was lower than reported for the bulk polycrystalline ceramics. This effect is attributed to lattice strains associated with the film processing and interfacial lattice matching constraints.