The α → β polytypic transformation in high-temperature indented SiC
Source abstract
Abstract
High-quality single crystals of 6H–SiC have been indented at 1170 °C in vacuum. A TEM study of the indented regions shows that a 6H → 3C polytypic transformation has occurred, further confirming that this phase transformation can be induced by an applied stress.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Advanced ceramic materials synthesis · Metal and Thin Film Mechanics
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References (20)
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