Thermally induced hillock formation in Al–Cu films

Isothermal annealing studies of hillocks formed on Al–15 wt.% Cu films, vapor deposited at 25 °C on oxidized silicon wafers, were carried out in situ in a scanning electron microscope. The original hillocks formed as a result of substrate-induced thermal expansion strains which caused material to diffuse out of the film to form the hillocks when the films were heated to the isothermal annealing temperatures. During isothermal annealing the hillock density decreased and the average size of the hillocks increased. Measurements of these quantities as a function of time were made at a series of temperatures ranging from 200 to 300 °C. The activation energies for these two cases were found to be 0.29 and 0.28 eV, respectively. X-ray energy spectroscopy analysis of the films showed that the hillocks were richer in copper than the matrix. Transmission electron microscopy showed that the average hillock and grain sizes in the variously annealed films were linearly related and of the same order of magnitude. The results were also analyzed using Chakraverty's models for surface and interfacial diffusion. It was concluded that the evidence clearly shows that the observed processes could be well characterized by a typical Ostwald ripening model.