Growth mechanism of superconducting MgB2 films prepared by various methods
Source abstract
Abstract
The growth mechanisms of MgB2 films obtained by different methods on various substrates are comparably studied by transport measurements and scanning electron microscopy observations. The analyzed films include those prepared by ex situ postanneal with Tc0 ˜38.8 K and those from in situ anneal with Tc0 ˜24 K. It is clearly observed that the films obtained by the high-temperature reaction of e-beam evaporated B with Mg vapor are formed by the nucleation of independent MgB2 grains at the film surface, indicating that this approach may not be suitable to obtain epitaxial films. A significant oxygen contamination was also present in films obtained from pulsed-laser-deposition-grown precursors, which drag the Tc0 down to 24 K.
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Research context
OpenAlex topics: Superconductivity in MgB2 and Alloys · Magnesium Alloys: Properties and Applications · Physics of Superconductivity and Magnetism
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References (11)
Show source-provided references
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