Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates

Beta–SiC thin films have been epitaxially grown on 6H–SiC {0001} substrates via chemical vapor deposition (CVD). The growth rate increased linearly with the source/carrier gas flow rate ratio. The activation energy for the growth of β–SiC grown on the Si face of the 6H–SiC substrate was 12 Kcal/mole. These observations are consistent with a surface reaction-controlled process. The as-grown surface morphology is dependent on the terminal layer of the substrate, the growth temperature, and the source/carrier gas flow rate ratio. The C face of a 6H–SiC {0001} substrate caused a higher growth rate and thus poorer surface morphology than the Si face under the same growth conditions. The optimum temperature range for growth of a flat, mirror-like β–SiC surface was determined to be 1773–1823 K in the present CVD system. The microstructure and nucleation of double positioning boundaries were investigated via transmission and scanning electron microscopies. Triangular defects and their modifications were also observed, and their origins have been discussed.