journal article·1991-07

Growth of diamond particles in chemical vapor deposition

Sumio Iijima, Yumi Aikawa, Kazuhiro Baba

Journal of Materials Research· Volume 6· Issue 7
Publisher page

Abstract

An early stage of diamond growth in hot-filament chemical vapor deposition on silicon substrates was examined by the high resolution electron microscope. “Pretreatment” of the substrate surfaces by diamond powder abrading was found to plant diamond seed crystals with a density of as high as 1011/cm2. These crystals provide sites for subsequent growth of diamond films. The CVD grown diamond particles tend to be cuboctahedra. Smaller particles in nanometer size are faultless, but larger ones of several tens of nanometers develop crystal faults. Some of them may originate from the seed crystals. Degradation of the diamond seed crystals due to the electron beam irradiation is discussed in terms of fabrication of diamond film.
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Research context

OpenAlex topics: Diamond and Carbon-based Materials Research · Semiconductor materials and devices · Electronic and Structural Properties of Oxides

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