journal article·2022-11-28

Laser-induced graphene-based miniaturized, flexible, non-volatile resistive switching memory devices

Prasanth K. Enaganti, Avinash Kothuru, Sanket Goel

Journal of Materials Research· Volume 37· Issue 22
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Abstract

Due to the growing popularity of wearable electronics, flexible memory devices are in great demand. The manufacturing method, materials synthesis, and device structure are key obstacles realize the deployable flexible memory devices. Herein, a single-step process of new and highly conductive porous laser-induced graphene (LIG) has been examined which offers higher electrical conductivity, porous structure and flexibility. Also, surface morphology, crystallinity, functional groups in LIG, and oxygen vacancies in MnO2nanoparticles have been comprehensively studied for memristor. The,Ion/Ioffratio of LIG and LIG/MnO2was 9.15 and 6.8, respectively. The drop casting of MnO2nanoparticles on LIG increases conductivity with oxygen vacancies, improving memristor behaviour of limitedIon/Ioffratio. The LIG fluid-based memristor with MnO2as a metal liquid has outstanding resistance switching capabilities. Moreover, the LIG has showed remarkable performance both substrate and active material for memristor in flexible, wearable, and fluid-based electronics applications.Graphical abstract
Source: expertdata · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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