DataVXJournal of Materials ResearchPaper
journal article·2021-12-14Open access

Experimental Hall electron mobility of bulk single crystals of transparent semiconducting oxides

Zbigniew Galazka, Klaus Irmscher, Mike Pietsch, Steffen Ganschow, Detlev Schulz, Detlef Klimm, Isabelle M. Hanke, Thomas Schroeder, Matthias Bickermann

Journal of Materials Research· Volume 36· Issue 23
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Abstract

Abstract We provide a comparative study of basic electrical properties of bulk single crystals of transparent semiconducting oxides (TSOs) obtained directly from the melt (9 compounds) and from the gas phase (1 compound), including binary (β-Ga2O3, In2O3, ZnO, SnO2), ternary (ZnSnO3, BaSnO3, MgGa2O4, ZnGa2O4), and quaternary (Zn1−xMgxGa2O4, InGaZnO4) systems. Experimental outcome, covering over 200 samples measured at room temperature, revealed n-type conductivity of all TSOs with free electron concentrations (ne) between 5 × 1015 and 5 × 1020 cm−3 and Hall electron mobilities (μH) up to 240 cm2 V−1 s−1. The widest range of ne values was achieved for β-Ga2O3 and In2O3. The most electrically conducting bulk crystals are InGaZnO4 and ZnSnO3 with ne > 1020 cm−3 and μH > 100 cm2 V−1 s−1. The highest μH values > 200 cm2 V−1 s−1 were measured for SnO2, followed by BaSnO3 and In2O3 single crystals. In2O3, ZnO, ZnSnO3, and InGaZnO4 crystals were always conducting, while others could be turned into electrical insulators. Graphic abstract
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OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Electronic and Structural Properties of Oxides

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References (100+)

Show source-provided references
1. H. Ohta, H. Hosono, Mater. Today 7, 42–51 (2004)10.1016/S1369-7021(04)00288-3 ↗
2. Ü. Özgür, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, H. Morkoç, J. Appl. Phys. 98, 041301 (2005)10.1063/1.1992666 ↗
3. M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern, Phys. Status Solidi A 207, 1437–1449 (2010)10.1002/pssa.200983771 ↗
4. M. Grundmann, F. Klüpfel, R. Karsthof, P. Schlupp, F.-L. Schein, D. Splith, C. Yang, S. Bitter, H. von Wenckstern, J. Phys. D: Appl. Phys. 49, 213001 (2016)10.1088/0022-3727/49/21/213001 ↗
5. E. Fortunato, P. Barquinha, R. Martins, Adv. Mater. 24, 2945–2986 (2012)10.1002/adma.201103228 ↗
6. H. von Wenckstern, Adv. Electron. Mater. 3, 1600350 (2017)10.1002/aelm.201600350 ↗
7. S. Lee, S. Jeon, R. Chaji, A. Nathan, Proc. IEEE 103, 644–664 (2015)10.1109/JPROC.2015.2405767 ↗
8. M. Higashiwaki, H. Murakami, Y. Kumagai, A. Kuramata, Jpn. J. Appl. Phys. 55, 1202A1 (2016)10.7567/JJAP.55.1202A1 ↗
9. S.J. Pearton, J. Yang, P.H. Cary IV., F. Ren, J. Kim, M.J. Tadjer, M.A. Mastro, Appl. Phys. Rev. 5, 011301 (2018)10.1063/1.5006941 ↗
10. Z. Galazka, Semicond. Sci. Technol. 33, 113001 (2018)10.1088/1361-6641/aadf78 ↗
11. A.E. Delahoy, S. Guo, Transparent conducting oxides for photovoltaics, in Handbook of Photovoltaic Science and Engineering, 2nd edn., ed. by A. Luque, S. Hegedus (Wiley, Hoboken, 2011)
12. D.S. Ginley, H. Hosono, D.C. Paine (eds.), Handbook of Transparent Conductors (Springer, Boston, 2010)
13. P. Barquinha, R. Martins, L. Pereira, E. Fortunato, Transparent Oxide Electronics: From Materials to Devices (Wiley, Hoboken, 2012)10.1002/9781119966999 ↗
14. S. Pearton, F. Ren, M. Mastro (eds.), Gallium Oxide Technology, Devices and Applications (Elsevier, Amsterdam, 2019)
15. M. Higashiwaki, S. Fujita (eds.), Gallium Oxide, Material Properties, Crystal Growth, and Devices (Springer, Cham, 2020)
16. Z. Galazka, Transparent Semiconducting Oxides—Bulk Crystal Growth and Fundamental Properties (Jenny Stanford Publishing, Dubai, 2020)10.1201/9781003045205 ↗
17. C. Janowitz, V. Scherer, M. Mohamed, A. Krapf, H. Dwelk, R. Manzke, Z. Galazka, R. Uecker, K. Irmscher, R. Fornari, M. Michling, D. Schmeißer, J.R. Weber, J.B. Varley, C.G. Van de Walle, New J. Phys. 13, 085014 (2011)10.1088/1367-2630/13/8/085014 ↗
18. K. Irmscher, M. Naumann, M. Pietsch, Z. Galazka, R. Uecker, T. Schulz, R. Schewski, M. Albrecht, R. Fornari, Phys. Status Solidi A 211, 54–58 (2014)10.1002/pssa.201330184 ↗
19. M. Feneberg, J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, J.S. Speck, Phys. Rev. B 93, 045203 (2016)10.1103/PhysRevB.93.045203 ↗
20. H. Schulz, K.H. Thiemann, Solid State Commun. 32, 783–785 (1979)10.1016/0038-1098(79)90754-3 ↗
21. W.S. Baer, Phys. Rev. 154, 785–789 (1967)10.1103/PhysRev.154.785 ↗
22. K.J. Button, D.R. Cohn, M. von Ortenverger, B. Lax, E. Mollwo, R. Helbig, Phys. Rev. Lett. 28, 1637–1639 (1972)10.1103/PhysRevLett.28.1637 ↗
23. R.L. Wieher, Phys. Rev. 152, 736–739 (1966)10.1103/PhysRev.152.736 ↗
24. J. Tang, L.Y. Deng, C.B. Tay, X.H. Zhang, J.W. Chai, H. Qin, H.W. Liu, T. Venkatesan, S.J. Chua, J. Appl. Phys. 115, 033111 (2014)10.1063/1.4861421 ↗
25. Y. Wang, J. Zhu, W. Tang, Appl. Phys. Lett. 104, 212103 (2014)10.1063/1.4879995 ↗
26. A. Bolzan, C. Fong, B.J. Brendan, J. Kennedy, C.J. Howard, Acta Cryst. B 53, 373–380 (1997)10.1107/S0108768197001468 ↗
27. M. Feneberg, C. Lidig, K. Lange, M.E. White, M.Y. Tsai, J.S. Speck, O. Bierwagen, R. Goldhahn, Phys. Status Solidi A 211, 82–86 (2014)10.1002/pssa.201330147 ↗
28. M. Feneberg, C. Lidig, M.E. White, M.Y. Tsai, J.S. Speck, O. Bierwagen, Z. Galazka, R. Goldhahn, APL Mater. 7, 022508 (2019)10.1063/1.5054351 ↗
29. Y. Inaguma, M. Yoshida, T. Katsumata, J. Am. Chem. Soc. 130, 6704–6705 (2008)10.1021/ja801843v ↗
30. M. Miyauchi, Z. Liu, Z.-G. Zhao, S. Anandan, K. Hara, Chem. Commun. 46, 1529–1531 (2010)10.1039/b921010e ↗
31. K.P. Ong, X. Fan, A. Subedi, M.B. Sullivan, D.J. Singh, APL Mater. 3, 062505 (2015)10.1063/1.4919564 ↗
32. A.J. Smith, A.J.E. Welch, Acta Crystallogr. 13, 653–656 (1960)10.1107/S0365110X60001540 ↗
33. Z. Galazka, R. Uecker, K. Irmscher, D. Klimm, R. Bertram, A. Kwasniewski, M. Naumann, R. Schewski, M. Pietsch, U. Juda, A. Fiedler, M. Albrecht, S. Ganschow, T. Markurt, C. Guguschev, M. Bickermann, J. Phys. Condens. Matter. 29, 075701 (2017)10.1088/1361-648X/aa50e2 ↗
34. C.A. Niedermeier, S. Rhode, S. Fearn, K. Ide, M.A. Moram, H. Hiramatsu, H. Hosono, T. Kamiya, Appl. Phys. Lett. 108, 172101 (2016)10.1063/1.4948355 ↗
35. C.A. Niedermeier, S. Rhode, K. Ide, H. Hiramatsu, H. Hosono, T. Kamiya, M.A. Moram, Phys. Rev. B 95, 161202 (2017)10.1103/PhysRevB.95.161202 ↗
36. L. Schwarz, Z. Galazka, T.M. Gesing, D. Klimm, Cryst. Res. Technol. 50, 961–966 (2015)10.1002/crat.201500275 ↗
37. Z. Galazka, D. Klimm, K. Irmscher, R. Uecker, M. Pietsch, R. Bertram, M. Naumann, M. Albrecht, A. Kwasniewski, R. Schewski, M. Bickermann, Phys. Status Solidi A 212, 1455–1460 (2015)10.1002/pssa.201431835 ↗
38. Z. Galazka, S. Ganschow, K. Irmscher, D. Klimm, M. Albrecht, R. Schewski, M. Pietsch, T. Schulz, A. Dittmar, A. Kwasniewski, R. Grueneberg, S. Bin Anooz, A. Popp, U. Juda, I.M. Hanke, T. Schroeder, M. Bickermann, Prog. Cryst. Growth Charact. Mater. 67, 100511 (2021)10.1016/j.pcrysgrow.2020.100511 ↗
39. Z. Galazka, S. Ganschow, R. Schewski, K. Irmscher, D. Klimm, A. Kwasniewski, M. Pietsch, A. Fiedler, I. Schulze-Jonack, M. Albrecht, T. Schröder, M. Bickermann, APL Mater. 7, 022512 (2019)10.1063/1.5053867 ↗
40. S.K. Sampath, D.G. Kanhere, R. Pandey, J. Phys. Condens. Matter. 11, 3635–3644 (1999)10.1088/0953-8984/11/18/301 ↗
41. H. Dixit, N. Tandon, S. Cottenier, R. Saniz, D. Lamoen, B. Partoens, V. Van Speybroeck, M. Waroquier, New J. Phys. 13, 063002 (2011)10.1088/1367-2630/13/6/063002 ↗
42. W. Assenmacher, G. Schnakenburg, Y. Michiue, Y. Kanke, N. Kimizuka, W. Mader, J. Solid State Chem. 215, 176–183 (2014)10.1016/j.jssc.2014.03.042 ↗
43. K. Iordanidou, C. Persson, Mater. Sci. Semicond. Process. 121, 105297 (2021)10.1016/j.mssp.2020.105297 ↗
44. Z. Galazka, R. Uecker, K. Irmscher, M. Albrecht, D. Klimm, M. Pietsch, M. Brützam, R. Bertram, S. Ganschow, R. Fornari, Cryst. Res. Technol. 45, 1229–1236 (2010)10.1002/crat.201000341 ↗
45. Z. Galazka, K. Irmscher, R. Uecker, R. Bertram, M. Pietsch, A. Kwasniewski, M. Naumann, T. Schulz, R. Schewski, D. Klimm, M. Bickermann, J. Cryst. Growth 404, 184–191 (2014)10.1016/j.jcrysgro.2014.07.021 ↗
46. Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, M. Bickermann, ECS J. Solid State Sci. Technol. 6, Q3007–Q3011 (2017)10.1149/2.0021702jss ↗
47. Z. Galazka, S. Ganschow, A. Fiedler, R. Bertram, D. Klimm, K. Irmscher, R. Schewski, M. Pietsch, M. Albrecht, M. Bickermann, J. Cryst. Growth 486, 82–90 (2018)10.1016/j.jcrysgro.2018.01.022 ↗
48. Z. Galazka, K. Irmscher, R. Schewski, I.M. Hanke, M. Pietsch, S. Ganschow, D. Klimm, A. Dittmar, A. Fiedler, T. Schroeder, M. Bickermann, J. Cryst. Growth 529, 125297 (2020)10.1016/j.jcrysgro.2019.125297 ↗
49. Z. Galazka, R. Schewski, K. Irmscher, W. Drozdowski, M.E. Witkowski, M. Makowski, A.J. Wojtowicz, I.M. Hanke, M. Pietsch, T. Schulz, D. Klimm, S. Ganschow, A. Dittmar, A. Fiedler, T. Schroeder, M. Bickermann, J. Alloy. Compd. 818, 152842 (2020)10.1016/j.jallcom.2019.152842 ↗
50. Z. Galazka, Czochralski method, in Gallium Oxide: Crystal Growth, Materials Properties, and Devices. ed. by M. Higashiwaki, S. Fujita (Springer, Cham, 2020), pp. 15–3610.1007/978-3-030-37153-1_2 ↗
51. Z. Galazka, R. Uecker, K. Irmscher, D. Schulz, D. Klimm, M. Albrecht, M. Pietsch, S. Ganschow, A. Kwasniewski, R. Fornari, J. Cryst. Growth 362, 349–352 (2013)10.1016/j.jcrysgro.2011.10.029 ↗
52. Z. Galazka, R. Uecker, R. Fornari, J. Cryst. Growth 388, 61–69 (2014)10.1016/j.jcrysgro.2013.11.049 ↗
53. Z. Galazka, K. Irmscher, M. Pietsch, T. Schulz, R. Uecker, D. Klimm, R. Fornari, CrystEngComm 15, 2220–2226 (2013)10.1039/C2CE26413G ↗
54. D. Schulz, S. Ganschow, D. Klimm, M. Neubert, M. Rossberg, M. Schmidbauer, R. Fornari, J. Cryst. Growth 296, 27–30 (2006)10.1016/j.jcrysgro.2006.08.012 ↗
55. D. Schulz, S. Ganschow, D. Klimm, K. Struve, J. Cryst. Growth 310, 1832–1835 (2008)10.1016/j.jcrysgro.2007.11.050 ↗
56. D. Klimm, S. Ganschow, D. Schulz, R. Fornari, J. Cryst. Growth 310, 3009–3013 (2008)10.1016/j.jcrysgro.2008.02.027 ↗
57. D. Schulz, S. Ganschow, D. Klimm, Mater. Res. Soc. Symp. Proc. 1201, 120-H06-10 (2010)
58. K. Jacobs, D. Schulz, D. Klimm, S. Ganschow, Solid State Sci. 12, 307–310 (2010)10.1016/j.solidstatesciences.2009.05.015 ↗
59. Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Pietsch, R. Schewski, M. Albrecht, A. Kwasniewski, S. Ganschow, D. Schulz, C. Guguschev, R. Bertram, M. Bickermann, R. Fornari, Phys. Status Solidi A 211, 66–73 (2014)10.1002/pssa.201330020 ↗
60. Z. Galazka, I.M. Hanke; Leibniz-Institut für Kristallzüchtung, Berlin, Germany (2019), unpublished data.
61. Z. Galazka, I.M. Hanke; Leibniz-Institut für Kristallzüchtung, Berlin, Germany (2016), unpublished data.
62. K. Hoshikawa, E. Ohba, T. Kobayashi, J. Yanagisawa, C. Miyagawa, Y. Nakamura, J. Cryst. Growth 447, 36–41 (2016)10.1016/j.jcrysgro.2016.04.022 ↗
63. E.G. Villora, K. Shimamura, Y. Yoshikawa, T. Ujiie, K. Aoki, Appl. Phys. Lett. 92, 202120 (2008)10.1063/1.2919728 ↗
64. J.B. Varley, H. Peelaers, A. Janotti, C.G. Van de Walle, J. Phys.: Condens. Matter 23, 334212 (2011)
65. A. Kuramata, K. Koshi, S. Watanabe, Y. Yamaoka, T. Masui, S. Yamakoshi, Jpn. J. Appl. Phys. 55, 1202A2 (2016)10.7567/JJAP.55.1202A2 ↗
66. E. Ahmadi, O.S. Koksaldi, S.W. Kaun, Y. Oshima, D.B. Short, U.K. Mishra, J.S. Speck, Appl. Phys. Express 10, 041102 (2017)10.7567/APEX.10.041102 ↗
67. M. Saleh, A. Bhattacharyya, J.B. Varley, S. Swain, J. Jesenovec, S. Krishnamoorthy, K. Lynn, Appl. Phys. Express 12, 085502 (2019)10.7567/1882-0786/ab2b6c ↗
68. M. Saleh, J.B. Varley, J. Jesenovec, A. Bhattacharyya, S. Krishnamoorthy, S. Swain, K. Lynn, Semicond. Sci. Technol. 35, 04LT01 (2020)10.1088/1361-6641/ab75a6 ↗
69. O. Bierwagen, Semicond. Sci. Technol. 30, 024001 (2015)10.1088/0268-1242/30/2/024001 ↗
70. S. Limpijumnong, P. Reunchan, A. Janotti, C.G. Van de Walle, Phys. Rev. B 80, 193202 (2009)10.1103/PhysRevB.80.193202 ↗
71. J.B. Varley, H. Peelaers, A. Janotti, C.G. Van de Walle, J. Phys. Condens. Matter 23, 334212 (2011)10.1088/0953-8984/23/33/334212 ↗
72. P. Ágoston, P. Erhart, A. Klein, K. Albe, J. Phys. Condens. Matter 21, 455801 (2009)10.1088/0953-8984/21/45/455801 ↗
73. R. Helbig, J. Cryst. Growth 15, 25–31 (1972)10.1016/0022-0248(72)90316-8 ↗
74. C.G. Van de Walle, Phys. Rev. Lett. 85, 1012–1015 (2000)10.1103/PhysRevLett.85.1012 ↗
75. E.V. Lavrov, F. Herklotz, J. Weber, Phys. Rev. B 79, 165210 (2009)10.1103/PhysRevB.79.165210 ↗
76. D.C. Look, J.W. Hemsky, J.R. Sizelove, Phys. Rev. Lett. 82, 2552–2555 (1999)10.1103/PhysRevLett.82.2552 ↗
77. J.B. Varley, A. Janotti, C.G. Van de Walle, Phys. Rev. B 81, 245216 (2010)10.1103/PhysRevB.81.245216 ↗
78. Z. Remes, M. Vanecek, H.M. Yates, P. Evans, D.W. Sheel, Thin Solid Films 517, 6287–6289 (2009)10.1016/j.tsf.2009.02.109 ↗
79. D.O. Scanlon, G.W. Watson, J. Mater. Chem. 22, 25236 (2012)10.1039/c2jm34352e ↗
80. P.D.C. King, R.L. Lichti, Y.G. Celebi, J.M. Gil, R.C. Vilão, H.V. Alberto, J.P. Duarte, D.J. Payne, R.G. Egdell, I. McKenzie, C.F. McConville, S.F.J. Cox, T.D. Veal, Phys. Rev. B 80, 081201 (2009)10.1103/PhysRevB.80.081201 ↗
81. X. Luo, Y.S. Oh, A. Sirenko, P. Gao, T.A. Tyson, K. Char, S.-W. Cheong, Appl. Phys. Lett. 100, 172112 (2012)10.1063/1.4709415 ↗
82. E. McCalla, D. Phelan, M.J. Krogstad, B. Dabrowski, C. Leighton, Phys. Rev. Meter. 2, 084601 (2018)
83. H.J. Kim, J. Kim, T.H. Kim, W.-J. Lee, B.-G. Jeon, J.-Y. Park, W.S. Choi, D.W. Jeong, S.H. Lee, J. Yu, T.W. Noh, K.H. Kim, Phys. Rev. B 88, 125204 (2013)10.1103/PhysRevB.88.125204 ↗
84. D.O. Scanlon, Phys. Rev. B 87, 161201 (2013)10.1103/PhysRevB.87.161201 ↗
85. S.C. Badescu, M.D. Santia, D.C. Look, K.D. Leedy; contribution at SPIE Photonic West, February 2020, San Francisco, entitled “First-principles modelling of native point defects in zinc gallate”
86. A. Murat, A.U. Adler, T.O. Mason, J.E. Medvedeva, J. Am. Chem. Soc. 135, 5685–5692 (2013)10.1021/ja311955g ↗
87. M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, R. Schewski, G. Wagner, ECS J. Solid State Sci. Technol. 6, Q3040–Q3044 (2017)10.1149/2.0081702jss ↗
88. O. Bierwagen, J.S. Speck, Phys. Status Solidi A 211, 48–53 (2014)10.1002/pssa.201330224 ↗
89. H. Tampo, H. Shibata, P. Fons, A. Yamada, K. Matsubara, K. Iwata, K. Tamura, H. Takasu, S. Niki, J. Cryst. Growth 278, 268–272 (2005)10.1016/j.jcrysgro.2005.01.030 ↗
90. M.E. White, O. Bierwagen, M.Y. Tsai, J.S. Speck, J. Appl. Phys. 106, 093704 (2009)10.1063/1.3254241 ↗
91. H.F. Wang, Q.Z. Liu, F. Chen, G.Y. Gao, W. Wu, X.H. Chen, J. Appl. Phys. 101, 106105 (2007)10.1063/1.2736629 ↗
92. M. Albrecht, R. Schewski, K. Irmscher, Z. Galazka, T. Markurt, M. Naumann, T. Schulz, R. Uecker, R. Fornari, S. Meuret, M. Kociak, J. Appl. Phys. 115, 053504 (2014)10.1063/1.4863211 ↗
93. Y. Tanaka, K. Wada, Y. Kobayashi, T. Fujii, S.J. Denholme, R. Sekine, N. Kase, N. Kimizuka, N. Miyakawa, CrystEngComm 21, 2985–2993 (2019)10.1039/C9CE00007K ↗
94. Z. Feng, A.F.M.A.U. Bhuiyan, Z. Xia, W. Moore, Z. Chen, J.F. McGlone, D.R. Daughton, A.R. Arehart, S.A. Ringel, S. Rajan, H. Zhao, Phys. Status Solidi RRL 14, 2000145 (2020)10.1002/pssr.202000145 ↗
95. N. Ma, N. Tanen, A. Verma, Z. Guo, T. Luo, H. (Grace) Xing, D. Jena, Appl. Phys. Lett. 109, 212101 (2016)10.1063/1.4968550 ↗
96. O. Bierwagen, J.S. Speck, Appl. Phys. Lett. 97, 072103 (2010)10.1063/1.3480416 ↗
97. M.W. Allen, P. Miller, R.J. Reeves, S.M. Durbin, Appl. Phys. Lett. 90, 062104 (2007)10.1063/1.2450642 ↗
98. X. Yang, C. Xu, N.C. Giles, J. Appl. Phys. 104, 073727 (2008)10.1063/1.2996032 ↗
99. C.G. Fonstad, R.H. Rediker, J. Appl. Phys. 42, 2911–2918 (1971)10.1063/1.1660648 ↗
100. Y. Hu, J. Hwang, Y. Lee, P. Conlin, D.G. Schlom, S. Datta, K. Cho, J. Appl. Phys. 126, 185701 (2019)10.1063/1.5109265 ↗