Isothermal sections in the Cr–Ga–N system in the 650–1000 °C temperature range
Source abstract
Abstract
Isothermal sections at 670, 740, and 800 °C in the Cr–Ga–N ternary system were investigated. Details of the Cr–Ga and Cr–N binary phase diagrams were confirmed, and the equilibrium diagrams were constructed. At all temperatures, Cr3GaN was in equilibrium with all the condensed phases, except GaN. In the 670–800 °C temperature range, Cr2GaN appears to be kinetically stable in contact with GaN. This led to the construction of behavior diagrams that are valid only as long as GaN is present in the initial mixture. Above ∼910 °C, Cr2GaN decomposes to form Cr3GaN, CrN, and Ga(1). At 1000 °C, Cr3GaN is in equilibrium with all the condensed phases, and CrN is in equilibrium with Ga.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · MXene and MAX Phase Materials
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