journal article·2006-11

Electronic structure of free-standing InP and InAs nanowires

B. Lassen, M. Willatzen, R. Melnik, L.C. Lew Yan Voon

Journal of Materials Research· Volume 21· Issue 11
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Abstract

An eight-band k·p theory that does not suffer from the spurious solution problem is demonstrated. It is applied to studying the electronic properties of InP and InAs free-standing nanowires. Band gaps and effective masses are reported as a function of size, shape, and orientation of the nanowires. We compare our results with experimental work and with other calculations.
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Research context

OpenAlex topics: Nanowire Synthesis and Applications · Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design

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