Influence of indium addition on electromigration behavior of solder joint
Source abstract
Abstract
The electromigration (EM) behavior of the Cu/Sn-In/Cu solder model strip was investigated under the conditions of high electrical current density (10 kA/cm2) at various temperatures. The composition of indium (In) was 0, 4, 8, and 16 in wt%. The interconnection of Sn-In solder alloys with a Cu substrate was prepared by reflow soldering at 250 °C. Micro structural analysis confirmed that primary intermetallic compound formed at the interface of the Cu/Sn-In strip was Cu6(In,Sn)5regardless of In contents. Sn grain size became finer as In content increased. After current stressing, electrical failure was caused by the formation of voids and cracks at the cathode because of the migration of Cu atoms. Sn-16In alloy that has fine grain structure exhibits excellent EM resistance primarily due to the retardation of Cu migration.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Electronic Packaging and Soldering Technologies · Metallurgical and Alloy Processes · 3D IC and TSV technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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