journal article·2013-07-14

Nanostructured germanium prepared via ion beam modification

Nicholas Guy Rudawski, Kevin Scott Jones

Journal of Materials Research· Volume 28· Issue 13
Publisher page

Abstract

“Nanostructured” germanium (Ge; also known as “voided,” “porous,” “nanoporous,” “cratered,” and “honeycomb” Ge) created via ion beam modification has been studied for many years. This work reviews the progress made in studying and characterizing the nanostructured morphology, particularly via the use of experimental techniques such as scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Specifically, the empirical observations of the structural evolution of Ge as a function of ion beam modification conditions are discussed with added emphasis placed on quantification of the microstructure. The experimental observations and microstructure quantification are further discussed in terms of the implications for proposed formation mechanisms of the nanostructured morphology. Potential uses of the nanostructured morphology in chemical sensor and energy storage applications and suggested future lines of research to further the fundamental understanding of nanostructuring in Ge using ion beam modification are also presented.
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Research context

OpenAlex topics: Semiconductor materials and interfaces · Ion-surface interactions and analysis · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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