Spectroscopic analysis of tungsten oxide thin films

We present a detailed study of the morphology and composition of tungsten oxide (WO₃) thin films, grown by radio frequency magnetron reactive sputtering at substrate temperatures varied from room temperature (RT) to 500 °C, using infrared (IR) absorption, Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS). This work includes valuable new far-IR results about structural changes in microcrystalline WO₃. Both IR absorption and Raman techniques reveal an amorphous sample grown at RT and initial crystallization into monoclinic structures for samples grown at temperatures between 100 and 300 °C. The Raman spectra of the samples grown at high temperatures indicate, apart from the monoclinic structure, a strain effect, with a distribution revealed by confocal Raman mapping. XPS indicates that the film surface maintains the stoichiometry WO_x, with a value of x slightly greater than 3 at RT due to oxygen contamination, which decreases with increasing temperature.