Preparation of MoS₂ thin films by chemical vapor deposition

The chemical vapor deposition (CVD) of MoS₂ by reaction of H₂S with molybdenum halides was determined to be thermodynamically favored over a wide range of temperature, pressure, and precursor concentration conditions as long as excess H₂S was available. The thermochemical stability of H₂S, MoF₆, and MoCI₅ was also assessed to address their suitability as precursors for the CVD of MoS₂. The results from the thermodynamic analysis were used as guidance in the deposition of MoS₂ thin films from MoF₆ and H₂S. The (002) basal planes of MoS₂ films deposited above 700 K were preferentially oriented perpendicular to the substrate surface.