journal article·2004-12-01

Atomic layer deposition of tungsten disulphide solid lubricant thin films

T.W. Scharf, S.V. Prasad, T.M. Mayer, R.S. Goeke, M.T. Dugger

Journal of Materials Research· Volume 19· Issue 12
Publisher page

Abstract

The synthesis and characterization of crystalline tungsten disulphide (WS2) solid lubricant thin films grown by atomic layer deposition (ALD) using WF6 and H2S gas precursors was studied. A new catalytic route was established to promote nucleation and growth of WS2 films on silicon surfaces with native oxide. Scanning electron microscopy with energy dispersive spectroscopy and Raman spectroscopy were used to determine the film morphology, composition, and crystallinity. The films exhibited solid lubricating behavior with a steady-state friction coefficient of 0.04 in a dry nitrogen environment.
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Research context

OpenAlex topics: Semiconductor materials and devices · Metal and Thin Film Mechanics · ZnO doping and properties

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