journal article·2000-01

Lattice parameters and thermal expansion of GaN

Robert R. Reeber, Kai Wang

Journal of Materials Research· Volume 15· Issue 1
Publisher page

Abstract

Neutron powder diffraction methods with Rietveld analysis are utilized to determine GaN lattice parameters from 15 to 298.1 K. Using these measurements and literature data, we calculated the thermal expansion of gallium nitride (GaN) and predicted its higher temperature thermal expansion. The results are compared with available experimental data and earlier work.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Boron and Carbon Nanomaterials Research · Metal and Thin Film Mechanics

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