journal article·1989-02

Self-diffusion and impurity diffusion of fee metals using the five-frequency model and the Embedded Atom Method

J. B. Adams, S. M. Foiles, W. G. Wolfer

Journal of Materials Research· Volume 4· Issue 1
Publisher page

Abstract

The activation energies for self-diffusion of transition metals (Au, Ag, Cu, Ni, Pd, Pt) have been calculated with the Embedded Atom Method (EAM); the results agree well with available experimental data for both mono-vacancy and di-vacancy mechanisms. The EAM was also used to calculate activation energies for vacancy migration near dilute impurities. These energies determine the atomic jump frequencies of the classic “five-frequency formula,” which yields the diffusion rates of impurities by a mono-vacancy mechanism. These calculations were found to agree fairly well with experiment and with Neumann and Hirschwald's “Tm” model.
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Research context

OpenAlex topics: Semiconductor materials and interfaces · Surface and Thin Film Phenomena · Advanced Materials Characterization Techniques

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