Application of Positron Annihilation Spectroscopy to Study the Recovery of Commercial Pure Al and Al-0.96 wt.% Si Alloys

Isochronal annealing of quenched commercial pure Al (99.95%) and Al-0.96 wt.% Si was investigated between room temperature (RT) and 550 °C. The annealing of defects was studied using positron lifetime and Doppler broadening (DB) techniques. The retardation of annealing defects in the two alloys is interpreted in terms of precipitation of impurities and Si atoms, as well as defect properties (size and concentration) in the framework of the two state trapping model.