Optical Interference During rf-GDOES Depth Profiling of Anodized Aluminum-Tantalum Alloy Films
Source abstract
Abstract
The optical interference effect observed in radio frequency glow discharge optical emission spectroscopy (rf-GDOES) depth profiles of anodic oxide films formed on several aluminum-tantalum alloys is investigated and then used to determine refractive index, thickness, and composition of the anodized Ta-Al alloy layer. Refractive indices at the tantalum wavelength (1.4-2.4) were found to increase approximately linearly with the Ta2O5/Al2O3 ratio in the inner layer of the anodic oxide film. The optical interference effect was used to determine the composition of the inner film layer from the intensity/time rf-GDOES depth profile with excellent agreement with RBS-derived values. Good accuracy is obtained for constant sputtering rates and hence good interfacial depth resolution and for intensity signals oscillating uniformly across the film. A procedure is also proposed for calculating the thickness of the transparent layer of the anodic oxide film using the refractive index value derived from calibration plots of refractive index versus Ta2O5/Al2O3 ratio. The quantified depth profile of anodized Ta-24at.%Al alloy is presented. There is excellent accuracy of the quantified composition. The accuracy of the film depth, however, has a strong correlation with calculated density.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Anodic Oxide Films and Nanostructures · Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
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