journal article·2017-11

Tribological Characterization of SiC and B4C Manufactured by Plasma Pressure Compaction

Felice Rubino, Mario Pisaturo, Adolfo Senatore, Pierpaolo Carlone, Tirumalai S. Sudarshan

Publisher page

Abstract

The objective of the present study was to assess the tribological properties and the wear behavior of silicon carbide and boron carbide ceramics, produced by the plasma pressure compaction sintering process. Reciprocating sliding tests were executed to evaluate the tribological behavior of silicon carbide and boron carbide. Samples of each material with distinct values of surface roughness Ra were tested. Wear mass loss, coefficients of friction and wear mechanism of the boron carbide and silicon carbide were evaluated by means of microscopes and an energy-dispersive spectroscopy probe. The coefficient of friction of the evaluated boron carbide was found to be 0.8, and the surface roughness affects only the starting transient, while for silicon carbide the steady-state value ranges from 0.5 to 0.8 depending on the roughness value Ra.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced ceramic materials synthesis · Metal and Thin Film Mechanics · Advanced materials and composites

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (58)

Show source-provided references
1. F. Thevenot, Boron Carbide—A Compressive Review, J. Eur. Ceram. Soc., 1990, 6, p 205–22510.1016/0955-2219(90)90048-K ↗
2. V. Presser and V.G. Nickel, Silica on Silicon Carbide, Crit. Rev. Solid State Mater. Sci., 2008, 33, p 1–9910.1080/10408430701718914 ↗
3. Z. Zahariev and D. Radev, Properties of Polycrystalline Boron Carbide Sintered in the Presence of W2B5 Without Pressing, J. Mater. Sci. Lett., 1988, 7(7), p 695–69610.1007/BF00722070 ↗
4. A.K. Suri, C. Subramanian, J.K. Sonber, and T.S.R. Ch, Murthy, Synthesis and Consolidation of Boron Carbide: A Review, Int. Mater. Rev., 2010, 55(1), p 4–4010.1179/095066009X12506721665211 ↗
5. M. Chen, J.W. McCauley, and K.J. Hemker, Shock-Induced Localized Amorphization in Boron Carbide, Science, 2003, 299(5612), p 1563–156610.1126/science.1080819 ↗
6. T. Sano, M. Shaeffer, L. Vargas-Gonzalez, J. Pomerantz, High Strain Rate Performance of Pressureless Sintered Boron Carbide, Dynamic Behavior of Materials, vol. 1, ch. 2, ed. by B. Song et al. in Proceedings of the 2013 Annual Conference on Experimental and Applied Mechanics X, 496, (ed.), 120, 2014. ISBN: 978-3-319-00770-0
7. J. Gerard LeCompte, U.S. Patent US5704825 A, 6 gen 1998
8. T. Han, Z. Zhao, B. Gillispie, J. Smith, U.S. Patent US20050214474 A1, 29 set 2005
9. R.A. Alliegro, L.B. Coffin, and J.R. Tinklepaugh, Pressure-Sintered Silicon Carbide, J. Am. Ceram. Soc., 1956, 39(11), p 386–38910.1111/j.1151-2916.1956.tb15609.x ↗
10. T. Doi, E. Uhlmann, and I.D. Marinescu, Handbook of Ceramics Grinding and Polishing, Norwich, William Andrew, 2015
11. C.K. Narula, Ceramic Precursor Technology and Its Application, Mc-Graw-Hill, New York, 1995
12. M. Willander, M. Friesel, Q. Wahab, and B. Straumal, Silicon Carbide and Diamond for High Temperature Device Applications, J. Mater. Sci. Mater. Electron., 2006, 17, p 1–2510.1007/s10854-005-5137-4 ↗
13. Y.W. Kim, M. Mitomo, and H. Hirotsuru, Grain-Growth and Fracture-Toughness of Fine-Grained Silicon-Carbide Ceramics, J. Am. Ceram. Soc., 1995, 78, p 3145–314810.1111/j.1151-2916.1995.tb09100.x ↗
14. K.Y. Lim, Y.W. Kim, and K.J. Kim, Mechanical Properties of Electrically Conductive Silicon Carbide Ceramics, Ceram. Int., 2014, 40(7B), p 10577–1058210.1016/j.ceramint.2014.03.036 ↗
15. S. Prochazka, Ceramics for High-Performance Applications, in Proceedings of 2nd Army Materials Technology Conference, Hyannis, MS, 1973, pp. 239–252
16. M. Omori and H. Takei, Pressureless Sintering of SiC, J. Am. Ceram. Soc., 1982, 65(6), p c80–c9610.1111/j.1151-2916.1982.tb10460.x ↗
17. H.W. Kim, Y.H. Koh, and H.E. Kim, Densification and Mechanical Properties of B4C with Al2O3 as a Sintering Aid, J. Am. Ceram. Soc., 2000, 83(11), p 2863–286510.1111/j.1151-2916.2000.tb01647.x ↗
18. L. Levin, N. Frage, and M.P. Dariel, A Novel Approach for the Preparation of B4C-Based Cermets, Int. J. Refract. Met. Hard Mater., 2000, 18, p 131–13510.1016/S0263-4368(00)00012-3 ↗
19. S. Mondal and A.K. Banthia, Low Temperature Synthetic Route for Boron Carbide, J. Eur. Ceram. Soc., 2005, 25, p 287–29110.1016/j.jeurceramsoc.2004.08.011 ↗
20. R. Angers and M. Beauvy, Hot-Pressing of Boron Carbide, Ceram. Int., 1983, 10(2), p 49–5510.1016/0272-8842(84)90025-7 ↗
21. H.T. Larker, L. Hermansson, and J. Adlerborn, Hot Isostatic Pressing and Its Applicability to Silicon Carbide and Boron Carbide, Mater. Sci. Monogr., 1987, 38(A), p 795–803
22. B.M. Moshtaghioun, D. Gomez-Garcia, A. Dominguez-Rodriguez, and R.I. Todd, Grain Size Dependence of Hardness and Fracture Toughness in Pure Near Fully-Dense Boron Carbide Ceramics, J. Eur. Ceram. Soc., 2016, 36(7), p 1829–183410.1016/j.jeurceramsoc.2016.01.017 ↗
23. H. Lee and R.F. Speyer, Pressureless Sintering of Boron Carbide, J. Am. Ceram. Soc., 2003, 86(9), p 1468–147310.1111/j.1151-2916.2003.tb03498.x ↗
24. R. Belon, G. Antou, N. Pradeilles, A. Maître, and D. Gosset, Mechanical Behaviour at High Temperature of Spark Plasma Sintered Boron Carbide Ceramics, Ceram. Int., 2017, 43(1), p 6631–663510.1016/j.ceramint.2017.02.053 ↗
25. T.Y. Cho, Y.W. Kim, and K.J. Kim, Thermal, Electrical, and Mechanical Properties of Pressureless Sintered Silicon Carbide Ceramics with Yttria-Scandia-Aluminum Nitride, J. Eur. Ceram. Soc., 2016, 36(11), p 2659–266510.1016/j.jeurceramsoc.2016.04.014 ↗
26. Y.W. Kim, T.Y. Cho, and K.J. Kim, Effect of Grain Growth on Electrical Properties of Silicon Carbide Ceramics Sintered with Gadolinia and Yttria, J. Eur. Ceram. Soc., 2015, 35(15), p 4137–414210.1016/j.jeurceramsoc.2015.08.006 ↗
27. M.F. Toksoy, W. Rafaniello, K.Y. Xie, L. Ma, K.J. Hemker, and R.A. Haber, Densification and Characterization of Rapid Carbothermal Synthesized Boron Carbide, Int. J. Appl. Ceram. Technol., 2017, 14, p 443–45310.1111/ijac.12654 ↗
28. D. Ghosh, G. Subhash, R. Radhakrishnan, and T.S. Sudarshan, Scratch-Induced Microplasticity and Microcracking in Zirconium Diboride–Silicon Carbide Composite, Acta Mater., 2008, 56, p 3011–302210.1016/j.actamat.2008.02.038 ↗
29. B.R. Klotz, K.C. Cho, and R.J. Dowding, Sintering Aids in the Consolidation of Boron Carbide (B4C) by the Plasma Pressure Compaction (P2C) Method, Mater. Manuf. Process., 2004, 19(4), p 631–63910.1081/AMP-200028083 ↗
30. D. Ghosh, G. Subhash, T.S. Sudarshan, R. Radhakrishnan, and X.L. Gao, Dynamic Indentation Response of Fine-Grained Boron Carbide, J. Am. Ceram. Soc., 2007, 90(6), p 1850–185710.1111/j.1551-2916.2007.01652.x ↗
31. M.G. Bothara, P. Vijay, S.V. Atre, S.J. Park, R.M. German, T.S. Sudarshan, and R. Radhakrishnan, Design of Experiment Approach for Sintering Study of Nanocrystalline SiC Fabricated Using Plasma Pressure Compaction, Source of the Document Science of Sintering, Sci. Sinter., 2009, 41(2), p 125–13310.2298/SOS0902125B ↗
32. B.G. Ravi, O.A. Omotoye, T.S. Srivatsan, M. Petrorali, and T.S. Sudarshan, The Microstructure and Hardness of Silicon Carbide Synthesized by Plasma Pressure Compaction, J. Alloys Compd., 2000, 299, p 292–29610.1016/S0925-8388(99)00815-4 ↗
33. M.G. Bothara, P. Vijay, S.V. Atre, S.J. Park, R.M. German, T.S. Sudarshan, and R. Radhakrishnan, Sintering Behavior of Nanocrystalline Silicon Carbide Using a Plasma Pressure Compaction System: Master Sintering Curve Analysis, Metall. Mater. Trans. A, 2010, 41(12), p 3252–326110.1007/s11661-010-0378-0 ↗
34. T.S. Srivatsan, B.G. Ravi, A.S. Naruka, L. Riester, M. Petraroli, and T.S. Sudarshan, The Microstructure and Hardness of Molybdenum Powders Consolidated by Plasma Pressure Compaction, Powder Technol., 2001, 114, p 136–14410.1016/S0032-5910(00)00285-0 ↗
35. L. Chu-Cheng, K. Ming-Guang, Z. Hui-Ying, H. Li-Ping, Z. Xue-Bin, and Z. Yi, Tribological Behavior of Vacuum Plasma Sprayed B4C-Mo Composite Coating, J. Inorg. Mater., 2016, 31(1), p 100–10610.15541/jim20150384 ↗
36. K. Miyoshi, D. Buckley, M. Srinivasan, Tribological Properties of—Sintered Polycrystalline and Single Crystal Silicon Carbide, in Eighty-Fourth Annual Meeting of the American Ceramic Society Cincinnati, Ohio, May 2–5, 1982
37. ISO/IEC GUIDE 98-3:2008. Uncertainty of Measurement—Part 3: Guide to the Expression of Uncertainty in Measurement (GUM:1995)
38. ASTM G133—05(2016) Standard Test Method for Linearly-Reciprocating Ball-on-Flat Sliding Wear
39. ASTM G99—17 Standard Test Method for Wear Testing with a Pin-on-Disk Apparatus
40. P. Larsson, N. Axen, and S. Hogmark, Tribofilm Formation on Boron Carbide in Sliding Wear, Wear, 1999, 236, p 73–8010.1016/S0043-1648(99)00266-5 ↗
41. F. Wu, L.S. Wang, J.S. Zhang, Y. Fan, B.W. Liu, and Y. Gao, Tribological Properties of Hot Pressed Boron Carbide Ceramic, Trans. Nonferr. Met. Soc. China (Engl. Ed.), 2001, 11(1), p 119–122
42. B.M. Moshtaghioun, D. Gomez-Garcia, A. Dominguez-Rodriguez, and R.I. Todd, Abrasive Wear Rate of Boron Carbide Ceramics: Influence of Microstructural and Mechanical Aspects on Their Tribological Response, J. Eur. Ceram. Soc., 2016, 36, p 3925–392810.1016/j.jeurceramsoc.2016.06.029 ↗
43. J.K. Sonber, P.K. Limaye, TSRCh Murthy, K. Sairam, A. Nagaraj, N.L. Soni, R.J. Patel, and J.K. Chakravartty, Tribological Properties of Boron Carbide in Sliding Against WC Ball, Int. J. Refract. Met. Hard Mater., 2015, 51, p 110–11710.1016/j.ijrmhm.2015.03.010 ↗
44. A.M. Turatti and A.S. Pereira, Wear Resistant Boron Carbide Compacts Produced by Pressureless Sintering, Ceram. Int., 2017, 43(11), p 7970–797710.1016/j.ceramint.2017.03.064 ↗
45. B.M. Moshtaghioun, D. Gomez-Garcia, A. Dominguez-Rodriguez, and R.I. Todd, Abrasive Wear Rate of Boron Carbide Ceramics: Influence of Microstructural and Mechanical Aspects on Their Tribological Response, J. Eur. Ceram. Soc., 2016, 36(16), p 3925–392810.1016/j.jeurceramsoc.2016.06.029 ↗
46. K. Umeda, Y. Enomoto, A. Mitsui, and K. Mannami, Friction and Wear of Boride Ceramics in Air and Water, Wear, 1993, 169, p 63–6810.1016/0043-1648(93)90391-X ↗
47. M. Cengiz, B. Yavas, Y. Celik, G. Goller, O. Yucel, F.C. Sahin, Spark Plasma Sintering of Boron Carbide Ceramics Using Different Sample Geometries and Dimensions, Acta Physica Polonica A, 2014, 125, in proceedings of the 3° International Congress APMAS2013, April 24–28, 2013, Antalya, Turkey.10.12693/APhysPolA.125.260 ↗
48. K.Y. Xie, M.F. Toksoy, K. Kuwelkar, B. Zhang, J.A. Krogstad, R.A. Haber, and K.J. Hemker, Effect of Alumina on the Structure and Mechanical Properties of Spark Plasma Sintered Boron Carbide, J. Am. Ceram. Soc., 2014, 97(11), p 3710–371810.1111/jace.13178 ↗
49. T.N. Nazarchuk and L.N. Mekhanoshina, The Oxidation of Boron Carbide, Powder Metall. Met. Ceram., 1964, 3(2), p 123–126710.1007/BF00774482 ↗
50. X. Dong, S. Jahanmir, and L.K. Ives, Wear Transition Diagram for Silicon Carbide, Tribol. Int., 1995, 28(8), p 559–572. doi: 10.1016/0301-679X(96)85544-710.1016/0301-679X(96)85544-7 ↗
51. S.P. Murzin and V.B. Balyakin, Microstructuring the Surface of Silicon Carbide Ceramic by Laser Action for Reducing Friction Losses in Rolling Bearings, Opt. Laser Technol., 2017, 88, p 96–9810.1016/j.optlastec.2016.09.007 ↗
52. Y. Aono, S. Ando, and A. Hirata, Microtribological Modification of Silicon Carbide Surface by Laser Irradiation, Precis. Eng., 2016, 43, p 270–27610.1016/j.precisioneng.2015.08.005 ↗
53. D.C. Cranmer, Friction and Wear Properties of Monolithic Silicon-Based Ceramics, J. Mater. Sci., 1985, 20, p 2029–203710.1007/BF01112286 ↗
54. S. Lafon-Placette, K. Delbé, J. Denape, and M. Ferrato, Tribological Characterization of Silicon Carbide and Carbon Materials, J. Eur. Ceram. Soc., 2015, 35, p 1147–115910.1016/j.jeurceramsoc.2014.10.038 ↗
55. G. Ervin Jr., Oxidation Behavior of Silicon Carbide, J. Am. Ceram. Soc., 1958, 41(9), p 347–35210.1111/j.1151-2916.1958.tb12932.x ↗
56. J.A. Costello and R.E. Tressler, Oxidation Kinetics of Hot-Pressed and Sintered α-SiC, J. Am. Ceram. Soc., 1981, 64(6), p 327–33110.1111/j.1151-2916.1981.tb10297.x ↗
57. J. Roy, S. Chandra, S. Das, and S. Maitra, Oxidation Behaviour of Silicon Carbide—A Review, Rev. Adv. Mater. Sci., 2014, 38, p 29–39
58. Starke et al., High Quality Iron Silicide films by Simultaneous Deposition of Iron and Silicon on Si (111), J. Appl. Phys., 2002, 91(9), p 6154–616110.1063/1.1467397 ↗