journal article·2025-08

A Modified Bosch Process of SF6/C4F8/O2 ICP-RIE Si Etching

Yi Wang, Luhua Chen, Xiangzhe Zeng, Jinhui Song

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OpenAlex topics: Semiconductor materials and devices · Electron and X-Ray Spectroscopy Techniques · Advancements in Battery Materials

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References (14)

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1. F. Marty, L. Rousseau, B. Saadany, B. Mercier, O. Français, Y. Mita, and T. Bourouina, Advanced Etching of Silicon Based on Deep Reactive Ion Etching for Silicon High Aspect Ratio Microstructures and Three-Dimensional Micro- and Nanostructures, Microelectron. J., 2005, 36(7), p 673–677.10.1016/j.mejo.2005.04.039 ↗
2. S.-S. Yun, S.-K. You, and J.-H. Lee, Fabrication of Vertical Optical Plane Using DRIE and KOH Crystalline Etching of (110) Silicon Wafer, Sens. Actuators A, 2006, 128(2), p 387–394.10.1016/j.sna.2006.02.015 ↗
3. T. Murayama and Y. Morikawa, TSV Etching and VDP Process Integration for High Reliability. In: 2015 International 3D Systems Integration Conference (3DIC), (Sendai, Japan), IEEE, 2015, p TS8.11.1-TS8.11.4. https://doi.org/10.1109/3DIC.2015.7334580.10.1109/3DIC.2015.7334580 ↗
4. I.U. Abhulimen, S. Polamreddy, S. Burkett, L. Cai, and L. Schaper, Effect of Process Parameters on via Formation in Si Using Deep Reactive Ion Etching, J. Vac. Sci. Technol. B Microelectron. Nanometer Struct. Process. Meas. Phenom., 2007, 25(6), p 1762–1770.
5. W.T. Pike, W.J. Karl, S. Kumar, S. Vijendran, and T. Semple, Analysis of Sidewall Quality in Through-Wafer Deep Reactive-Ion Etching, Microelectron. Eng., 2004, 73–74, p 340–345.10.1016/S0167-9317(04)00122-4 ↗
6. J. Fu, J. Li, J. Yu, R. Liu, J. Li, W. Wang, W. Wang, and D. Chen, Improving Sidewall Roughness by Combined RIE-Bosch Process, Mater. Sci. Semicond. Process., 2018, 83, p 186–191.10.1016/j.mssp.2018.04.033 ↗
7. T. Defforge, X. Song, G. Gautier, T. Tillocher, R. Dussart, S. Kouassi, and F. Tran-Van, Scalloping Removal on DRIE via Using Low Concentrated Alkaline Solutions at Low Temperature, Sens. Actuators A, 2011, 170(1), p 114–120.10.1016/j.sna.2011.05.028 ↗
8. M.M. Potter, M.E. Phelan, P. Balaji, P. Jahelka, H.C. Bauser, R.D. Glaudell, C.M. Went, M.J. Enright, D.R. Needell, A. Augusto, H.A. Atwater, and R.G. Nuzzo, Silicon Heterojunction Microcells, ACS Appl. Mater. Interfaces, 2021, 13(38), p 45600–45608.10.1021/acsami.1c11122 ↗
9. G.H. Wong, K.J. Chui, G.K. Lau, W.L. Loh, and L. HongYu, Through Silicon via (TSV) Scallop Smoothening Technique. In: 2014 IEEE 16th Electronics Packaging Technology Conference (EPTC), (Singapore), IEEE, 2014, p 676–678. https://doi.org/10.1109/EPTC.2014.7028274.10.1109/EPTC.2014.7028274 ↗
10. F. Huang, Z. Fan, X. Chen, Y. Liu, S. Zhang, Y. Wang, and Y. Jiang, Research on TSV Thermal-Mechanical Reliability Based on Finite Element Analysis. In: 2019 Prognostics and System Health Management Conference (PHM-Qingdao), (Qingdao, China), IEEE, 2019, p 1–8. https://doi.org/10.1109/PHM-Qingdao46334.2019.8942816.10.1109/PHM-Qingdao46334.2019.8942816 ↗
11. R. Knizikevičius, Simulations of Si and SiO2 Etching in SF6+O2 Plasma, Vacuum, 2009, 83(6), p 953–957.10.1016/j.vacuum.2008.11.002 ↗
12. A.F. Isakovic, K. Evans-Lutterodt, D. Elliott, A. Stein, and J.B. Warren, Cyclic, Cryogenic, Highly Anisotropic Plasma Etching of Silicon Using SF6O2, J. Vac. Sci. Technol. A Vac. Surf. Films, 2008, 26(5), p 1182–1187.10.1116/1.2960557 ↗
13. K. Jung, W. Song, H.W. Lim, and C.S. Lee, Parameter Study for Silicon Grass Formation in Bosch Process, J. Vac. Sci. Technol. B, 2010, 28(1), p 143–148.10.1116/1.3280131 ↗
14. X. Liu, Black Silicon: Fabrication Methods, Properties and Solar Energy Applications, Environ. Sci. Ger., 2014, 7, p 3223.