Atomic layer etching of metal–polar aluminum nitride and gallium nitride using SF ₆ and Cl ₂ /BCl ₃ plasma

Abstract

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Plasma Diagnostics and Applications · Acoustic Wave Resonator Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

Department of Materials Science and Engineering, University of Colorado, Boulder, Colorado 80303, USA

School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA

Cornell NanoScale Science and Technology Facility, Cornell University, Ithaca, New York 14853, USA

Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, USA

Department of Chemistry, University of Colorado, Boulder, Colorado 80309-0215, USA

Funding

Semiconductor Research Corporation · Army Research Office · Defense Sciences Office, DARPA · National Science Foundation

References (50)