The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: a MD study applying an Al potential fitted to DFT barriers
Source abstract
Abstract
The atomistic relationship between implantation temperature, damage evolution, defect recombination, clustering, and dopant activation remains poorly understood.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors, Institute for Microelectronics, TU Wien, 1040 Vienna, Austria
Silvaco Europe Ltd., St Ives, Cambridgeshire, PE27 5JL, UK
Funding
Bundesministerium für Arbeit und Wirtschaft · Christian Doppler Forschungsgesellschaft
References (53)
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