Tone inversion patterning of negative tone dry resist using reactive plasma-based dry development
Source abstract
Abstract
A CVD-deposited Sn-based inorganic resist undergoes ligand dissociation and Sn–O–Sn network formation upon ArF exposure. Plasma development enables dual-tone patterning: Cl 2 /Ar retains the crosslinked network for negative tone, while CH 4 /Cl 2 /Ar removes the exposed regions for positive tone.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advancements in Photolithography Techniques · Copper Interconnects and Reliability · Nanofabrication and Lithography Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Display Engineering, Sungkyunkwan University, Suwon 16419, Korea
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
Funding
National Research Foundation of Korea
References (34)
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