DataVXJournal of Materials Chemistry CPaper
journal article·2026Open access

Correction: Ge-doping-induced phase engineering of β/ε-Ga 2 O 3 for high-performance ultraviolet detectors

Jiahui Xie, Chen Li, Xinyu Liu, Guodong Wang, Yiyuan Liu, Han Yan, Yang Li, Xiaohu Hou, Tao Qi, Wenxiang Mu

Journal of Materials Chemistry C· Volume 14· Issue 27
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Source abstract

Abstract

Correction for ‘Ge-doping-induced phase engineering of β/ε-Ga 2 O 3 for high-performance ultraviolet detectors’ by Jiahui Xie et al. , J. Mater. Chem. C , 2026, https://doi.org/10.1039/D6TC00506C.
Only a short abstract or summary was supplied by the source.
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Research context

OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Institute of Crystal Materials, Shandong University, Jinan, Shandong, 250100, China

School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China

Jinan Jingheng Electronics Co., Ltd, No. 13856, West Jingshi Road, Ping’an Subdistrict, Changqing District, Jinan City, Shandong Province, P. R. China

Shenzhen Research Institute of Shandong University, Virtual University Park in South District, Shenzhen 518057, China

Funding

Natural Science Foundation of Shandong Province · National Key Research and Development Program of China · Shenzhen Municipal Fundamental Research Program · National Natural Science Foundation of China

References

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