Doping and defect co-engineering strategy to overcome the gain-speed dilemma of a Ga 2 O 3 thin film grown by the mist-CVD technique
Source abstract
Abstract
The simultaneous modulation of chemical composition and energy band structure contributes to high gain and high-speed device applications.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Ga2O3 and related materials · Thin-Film Transistor Technologies · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering (College of Industry-Education Integration), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
School of Electronic Information Engineering, Electronic-Photonic Smart Sensing Device R&D Team, Inner Mongolia Key Laboratory of Intelligent Communication and Sensing and Signal Processing, Inner Mongolia University, Hohhot 010021, China
Funding
National Natural Science Foundation of China · China Scholarship Council
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