journal article·2026

A high-performance, self-powered β-Ga 2 O 3 asymmetric Schottky barrier deep-ultraviolet photodiode

Wei Wang, Chenxing Liu, Zhengyuan Wu, Duanyang Chen, Ning Jia, Qinglin Sai, Daoyou Guo, Xin Dong, Kelvin H. L. Zhang, Hongji Qi, Weihua Tang, Zhilai Fang

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Abstract

A deep-ultraviolet photodiode with an asymmetric-Schottky-barrier-induced V bi of 0.95 V has been fabricated on p-type β-Ga 2 O 3 films. The device exhibits high responsivity of 42.87 mA W −1 and high detectivity of 2.1 × 10 12 Jones in self-powered mode.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Intelligent Robotics and Advanced Manufacturing, and Institute of Optoelectronics, Fudan University, Shanghai, 200433, China

Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

Shanghai Key Laboratory of Wide and Ultra-Wide Bandgap Semiconductor Materials, Shanghai, 201800, China

Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun, 130012, China

State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China

Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China

Funding

National Natural Science Foundation of China · Natural Science Foundation of Shanghai Municipality

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