Atomic-level surface formation of large-size SiC substrates by chemical mechanical polishing: interfacial chemistry and removal mechanism
Source abstract
Abstract
A CeO 2 –KMnO 4 -PVP slurry enables atomic-level finishing of large-size SiC substrates CeO 2 forms Ce–O–Si bonds with the oxidized SiO 2 layer, promoting selective reaction-layer removal.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Silicon Carbide Semiconductor Technologies · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of High-performance Precision Manufacturing, Dalian University of Technology, Dalian 116024, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Science and Technology Department of Henan Province
References (39)
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