Influence of composition and structure on resistive switching properties of hafnium–titanium-oxide thin films grown by atomic layer deposition
Source abstract
Abstract
Resistive switching of Hf x Ti 1− x O y (0.07 ≤ x ≤ 0.64) films was studied. Increase in x , enabling formation of orthorhombic Hf x Ti 1− x O y , caused an increase in the breakdown electric field strength, resistive switching memory window, and endurance.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials
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Affiliations
University of Tartu, Institute of Physics, W. Ostwaldi 1, 50411 Tartu, Estonia
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Universidad de Valladolid, Campus ‘Miguel Delibes’, 47011 Valladolid, Spain
Funding
Eesti Teadusagentuur · Ministerio de Ciencia e Innovación
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