Composition-driven optimization of amorphous Ge 1− x Se x for high-performance OTS selectors
Source abstract
Abstract
First-principles simulations reveal optimal stability in Ge 1− x Se x ( x = 0.4 and 0.6) via Ge–Se bonding. The band gap increases linearly (0.58–0.81 eV) with Se content, enabling threshold voltage tuning and enhanced endurance for OTS selectors.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials
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Affiliations
School of Mathematics and Physics, China University of Geosciences, Wuhan 430074, China
Xincun Technology (Wuhan) Co., LTD, Wuhan 430075, China
Shenzhen Research Institute, China University of Geosciences, Shenzhen 518057, China
School of Integrated Circuits, Wuhan University, Wuhan 430072, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · National Natural Science Foundation of China-Guangdong Joint Fund
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