Ge-doping-induced phase engineering of β/ε-Ga 2 O 3 for high-performance ultraviolet detectors
Source abstract
Abstract
Solar-blind deep-ultraviolet (DUV) photodetectors based on intrinsic Ga 2 O 3 typically suffer from a trade-off between low responsivity and high dark current due to poor carrier transport and high defect densities.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques · Neonatal and Maternal Infections
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Institute of Crystal Materials, Shandong University, Jinan, Shandong, 250100, China
School of Microelectronics University of Science and Technology of China, Hefei, 230026, China
Jinan Jingheng Electronics Co., Ltd, No. 13856, West Jingshi Road, Ping’an Subdistrict, Changqing District, Jinan City, Shandong Province, P. R. China
Shenzhen Research Institute of Shandong University, Virtual University Park in South District, Shenzhen 518057, China
Funding
Natural Science Foundation of Shandong Province · National Key Research and Development Program of China · Shenzhen Municipal Fundamental Research Program · National Natural Science Foundation of China
References (45)
Show source-provided references
1. Moore · Adv. Electron. Mater. · 2025 · 11 · 240089810.1002/aelm.202400898 ↗
2. Chen · Semicond. Sci. Technol. · 2020 · 35 · 02300110.1088/1361-6641/ab6102 ↗
3. Liu · IEEE Electron Dev. Lett. · 2023 · 44 · 132410.1109/LED.2023.3287852 ↗
4. Tan · J. Mater. Sci. Technol. · 2024 · 190 · 20010.1016/j.jmst.2023.12.032 ↗
5. Biyikli · Mrs Internet J. Nitride Semicond. Res. · 2003 · 8 · 210.1557/S1092578300000454 ↗
6. Ju · Appl. Phys. Lett. · 2008 · 93 · 17350510.1063/1.3002371 ↗
7. Korhonen · Appl. Phys. Lett. · 2015 · 106 · 24210310.1063/1.4922814 ↗
8. Li · J. Mater. Sci. · 2019 · 54 · 1033510.1007/s10853-019-03628-z ↗
9. Zhu · J. Alloys Compd. · 2025 · 1010 · 17775710.1016/j.jallcom.2024.177757 ↗
10. Tang · J. Mater. Chem. C · 2025 · 13 · 1833810.1039/D5TC02250A ↗
11. Kim · Appl. Surf. Sci. · 2025 · 679
12. Yoon · Adv. Photonics Res. · 2022 · 3 · 210031610.1002/adpr.202100316 ↗
13. Bao · J. Mater. Chem. C · 2024 · 12 · 1487610.1039/D4TC02859G ↗
14. Yu · Mater. Today Commun. · 2023 · 34 · 10512710.1016/j.mtcomm.2022.105127 ↗
15. Liu · IEEE Sens. J. · 2024 · 24 · 2563510.1109/JSEN.2024.3424225 ↗
16. Lu · Adv. Mater. · 2025 · 37
17. Chen · Cryst. Growth Des. · 2018 · 18 · 114710.1021/acs.cgd.7b01576 ↗
18. Kracht · Phys. Rev. Appl. · 2017 · 8 · 05400210.1103/PhysRevApplied.8.054002 ↗
19. Choi · Appl. Phys. Express · 2018 · 11 · 06110510.7567/APEX.11.061105 ↗
20. Sun · J. Alloys Compd. · 2019 · 794 · 37410.1016/j.jallcom.2019.04.253 ↗
21. Kang · ACS Omega · 2021 · 6 · 3129210.1021/acsomega.1c05130 ↗
22. Kneiss · APL Mater. · 2019 · 7 · 02251610.1063/1.5054378 ↗
23. Sharma · J. Vac. Sci. Technol., B · 2019 · 37 · 05120410.1116/1.5118001 ↗
24. Hu · Mater. Sci. Semicond. Process. · 2024 · 178 · 10845310.1016/j.mssp.2024.108453 ↗
25. Wakamatsu · Appl. Phys. Lett. · 2024 · 125 · 21210610.1063/5.0231630 ↗
26. Saleh · Semicond. Sci. Technol. · 2020 · 35 · 04lt0110.1088/1361-6641/ab75a6 ↗
27. Mi · J. Cryst. Growth · 2012 · 354 · 9310.1016/j.jcrysgro.2012.06.022 ↗
28. Cao · Mater. Sci. Semicond. Process. · 2018 · 77 · 5810.1016/j.mssp.2018.01.010 ↗
29. Ma · Vacuum · 2022 · 198 · 11088610.1016/j.vacuum.2022.110886 ↗
30. Li · J. Alloys Compd. · 2020 · 823 · 15375510.1016/j.jallcom.2020.153755 ↗
31. Zhang · Results Phys. · 2023 · 52 · 10691610.1016/j.rinp.2023.106916 ↗
32. M.Razeghi and A.Rogalski , presented in part at the Photodetectors: Materials And Devices, 1996
33. Qian · ACS Photonics · 2017 · 4 · 220310.1021/acsphotonics.7b00359 ↗
34. Kim · Appl. Surf. Sci. · 2025 · 679 · 16116510.1016/j.apsusc.2024.161165 ↗
35. Yoon · Adv. Photonics Res. · 2022 · 3 · 210031610.1002/adpr.202100316 ↗
36. Zhang · J. Alloys Compd. · 2021 · 859 · 15781010.1016/j.jallcom.2020.157810 ↗
37. Chen · CrystEngComm · 2023 · 25 · 287110.1039/D3CE00078H ↗
38. Li · Ceram. Int. · 2025 · 51 · 1039510.1016/j.ceramint.2024.12.472 ↗
39. Lovejoy · Appl. Phys. Lett. · 2012 · 100 · 18160210.1063/1.4711014 ↗
40. Guo · Phys. Rev. Appl. · 2020 · 13 · 02405110.1103/PhysRevApplied.13.024051 ↗
41. Schroder · Meas. Sci. Technol. · 2001 · 12 · R1610.1088/0957-0233/12/3/202 ↗
42. Sun · Surf. Interfaces · 2025 · 72 · 10694910.1016/j.surfin.2025.106949 ↗
43. Tak · Crystals · 2021 · 11 · 104610.3390/cryst11091046 ↗
44. Ghosh · J. Mater. Sci. · 2021 · 56 · 1912810.1007/s10853-021-06459-z ↗
45. Shin · Nanomaterials · 2023 · 13 · 88210.3390/nano13050882 ↗