journal article·2026

A disordered–ordered TiO 2 /TiO 2− x homostructure hosting a high-mobility interfacial conductive layer for robust symmetric rectification

Yunyun Li, Chenglin Li, Lei Wang, Zhuoyuan Li, Yuqing Zhu, Diwen Zhou, Guoming Lin, Weiguang Lan, Yuanwei Lin

Journal of Materials Chemistry C· Volume 14· Issue 26
Publisher page

Abstract

Low-cost chemical vapor reduction (CVR) creates a disordered TiO 2 /ordered TiO 2− x homostructural interface that hosts a vacancy-driven interfacial conductive layer, enabling ultrahigh rectification in a strictly symmetric Au/TiO 2 /TiO 2− x /TiO 2 /Au device.
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Research context

OpenAlex topics: Semiconductor materials and devices · Copper-based nanomaterials and applications · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Fujian Provincial Key Laboratory of Ecology-Toxicological Effects & Control for Emerging Contaminants, Key Laboratory of Ecological Environment and Information Atlas, College of Environmental and Biological Engineering, Putian University, Putian 351100, China

State Key Laboratory of Green and Efficient Development of Phosphorus Resources & School of Future Technology, Fuzhou 350108, China

Department of Chemistry & Faculty of Science, National University of Singapore, 119077, Singapore

Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China

Center for Nanoscience and Nanotechnology, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China

Funding

National Natural Science Foundation of China

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